JMTQ160P03A
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JMTQ160P03A
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 5.4
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 30
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 15
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13
nS
Cossⓘ - Capacitancia
de salida: 273
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014
Ohm
Paquete / Cubierta: PDFN3X3-8L
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JMTQ160P03A
Datasheet (PDF)
..1. Size:473K jiejie micro
jmtq160p03a.pdf 
JMTQ160P03ADescriptionJMT P-channel Enhancement Mode Power MOSFETFeatures Application V = -30V, I = -15A PWM ApplicationsDS DR
9.1. Size:607K jiejie micro
jmtq120c03d.pdf
JMTQ120C03DDescriptionJMT N And P-Channel Enhancement Mode MOSFETFeatures Application N-Channel: 30V, 11A Battery ProtectionR
9.2. Size:467K jiejie micro
jmtq130p04a.pdf
JMTQ130P04ADescriptionJMT P-channel Enhancement Mode Power MOSFETFeatures Application V = -40V, I = -30A PWM ApplicationsDS DR
9.3. Size:1176K jiejie micro
jmtq130n04d.pdf
JMTQ130N04DDescriptionJMT Dual N-channel Enhancement Mode Power MOSFETFeaturesApplications 40V, 20A Load SwitchRDS(ON)
9.4. Size:1391K jiejie micro
jmtq120n04d.pdf
40V, 29A, 15m N-channel Power Trench MOSFETJMTQ120N04DProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 1.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 29 A Pb-free platingRDS(ON)_Typ(@VGS=10V 14 mWRDS(ON)_Typ(@VGS=4.5V 15 mWApplications Load Switch PWM
9.5. Size:526K jiejie micro
jmtq120n03d.pdf
JMTQ120N03DDescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications Load Switch 30V, 15A PWM ApplicationRDS(ON)
9.6. Size:1399K jiejie micro
jmtq100n03d.pdf
30V, 34A, 13.5m N-channel Power Trench MOSFETJMTQ100N03DProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 34 A Pb-free platingRDS(ON)_Typ(@VGS=10V 9.9 mWRDS(ON)_Typ(@VGS=4.5V 13.5 mWApplications Load Switch
9.7. Size:1355K jiejie micro
jmtq11dp03a.pdf
-30V, -12A, 87m P-channel Power Trench MOSFETJMTQ11DP03AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS -30 V 100% Vds TestedVGS(th)_Typ -1.7 V Halogen-free; RoHS-compliantID(@VGS=-10V) -12 A Pb-free platingRDS(ON)_Typ(@VGS=-10V 62 mWRDS(ON)_Typ(@VGS=-4.5V 87 mWApplications Load Switch
9.8. Size:479K jiejie micro
jmtq120n03a.pdf
JMTQ120N03ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 30V, 18A Load SwitchRDS(ON)
9.9. Size:1355K jiejie micro
jmtq100p03a.pdf
-30V,-40A, 9.3m P-channel Power Trench MOSFETJMTQ100P03AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS -30 V 100% Vds TestedVGS(th)_Typ -1.6 V Halogen-free; RoHS-compliantID(@VGS=-10V) -40 A Pb-free plating RDS(ON)_Typ(@VGS=-10V 6.4 mWRDS(ON)_Typ(@VGS=-4.5V 9.3 mW Applications Load Swi
9.10. Size:1101K jiejie micro
jmtq100n03a.pdf
JMTQ100N03ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 30V, 25A Load SwitchRDS(ON)
9.11. Size:1237K jiejie micro
jmtq190n03a.pdf
30V, 29A, 16.5m N-channel Power Trench MOSFETJMTQ190N03AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 29 ARDS(ON)_Typ(@VGS=10V 13.2 mW Pb-free platingRDS(ON)_Typ(@VGS=4.5V 16.5 mWApplications Load Switch
9.12. Size:416K jiejie micro
jmtq11dn10a.pdf
JMTQ11DN10ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Application 100V,10A Load SwitchR
9.13. Size:1674K jiejie micro
jmtq170c04d.pdf
40V, 14A, 21m&38m N And P-channel Power Trench MOSFETJMTQ170C04DProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters N P Unit 100% UIS TestedVDSS 40 -40 V 100% Vds TestedVGS(th)_Typ 1.7 -1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 14 -14 A Pb-free platingRDS(ON)_Typ(@VGS=10V 16 32 mWRDS(ON)_Typ(@VGS=4.5V 21 38 mWApplic
9.14. Size:608K jiejie micro
jmtq100n04a.pdf
JMTQ100N04ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeaturesApplications 40V, 30A Load SwitchRDS(ON)
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