JMTQ160P03A datasheet, аналоги, основные параметры
Наименование производителя: JMTQ160P03A
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 5.4 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 13 ns
Cossⓘ - Выходная емкость: 273 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.014 Ohm
Тип корпуса: PDFN3X3-8L
Аналог (замена) для JMTQ160P03A
- подборⓘ MOSFET транзистора по параметрам
JMTQ160P03A даташит
..1. Size:473K jiejie micro
jmtq160p03a.pdf 
JMTQ160P03A Description JMT P-channel Enhancement Mode Power MOSFET Features Application V = -30V, I = -15A PWM Applications DS D R
9.1. Size:607K jiejie micro
jmtq120c03d.pdf 
JMTQ120C03D Description JMT N And P-Channel Enhancement Mode MOSFET Features Application N-Channel 30V, 11A Battery Protection R
9.2. Size:467K jiejie micro
jmtq130p04a.pdf 
JMTQ130P04A Description JMT P-channel Enhancement Mode Power MOSFET Features Application V = -40V, I = -30A PWM Applications DS D R
9.3. Size:1176K jiejie micro
jmtq130n04d.pdf 
JMTQ130N04D Description JMT Dual N-channel Enhancement Mode Power MOSFET Features Applications 40V, 20A Load Switch RDS(ON)
9.4. Size:1391K jiejie micro
jmtq120n04d.pdf 
40V, 29A, 15m N-channel Power Trench MOSFET JMTQ120N04D Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 1.5 V Halogen-free; RoHS-compliant ID(@VGS=10V) 29 A Pb-free plating RDS(ON)_Typ(@VGS=10V 14 mW RDS(ON)_Typ(@VGS=4.5V 15 mW Applications Load Switch PWM
9.5. Size:526K jiejie micro
jmtq120n03d.pdf 
JMTQ120N03D Description JMT N-channel Enhancement Mode Power MOSFET Features Applications Load Switch 30V, 15A PWM Application RDS(ON)
9.7. Size:1355K jiejie micro
jmtq11dp03a.pdf 
-30V, -12A, 87m P-channel Power Trench MOSFET JMTQ11DP03A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS -30 V 100% Vds Tested VGS(th)_Typ -1.7 V Halogen-free; RoHS-compliant ID(@VGS=-10V) -12 A Pb-free plating RDS(ON)_Typ(@VGS=-10V 62 mW RDS(ON)_Typ(@VGS=-4.5V 87 mW Applications Load Switch
9.8. Size:479K jiejie micro
jmtq120n03a.pdf 
JMTQ120N03A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 18A Load Switch RDS(ON)
9.9. Size:1355K jiejie micro
jmtq100p03a.pdf 
-30V,-40A, 9.3m P-channel Power Trench MOSFET JMTQ100P03A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS -30 V 100% Vds Tested VGS(th)_Typ -1.6 V Halogen-free; RoHS-compliant ID(@VGS=-10V) -40 A Pb-free plating RDS(ON)_Typ(@VGS=-10V 6.4 mW RDS(ON)_Typ(@VGS=-4.5V 9.3 mW Applications Load Swi
9.10. Size:1101K jiejie micro
jmtq100n03a.pdf 
JMTQ100N03A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 25A Load Switch RDS(ON)
9.12. Size:416K jiejie micro
jmtq11dn10a.pdf 
JMTQ11DN10A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 100V,10A Load Switch R
9.13. Size:1674K jiejie micro
jmtq170c04d.pdf 
40V, 14A, 21m &38m N And P-channel Power Trench MOSFET JMTQ170C04D Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters N P Unit 100% UIS Tested VDSS 40 -40 V 100% Vds Tested VGS(th)_Typ 1.7 -1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 14 -14 A Pb-free plating RDS(ON)_Typ(@VGS=10V 16 32 mW RDS(ON)_Typ(@VGS=4.5V 21 38 mW Applic
9.14. Size:608K jiejie micro
jmtq100n04a.pdf 
JMTQ100N04A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 40V, 30A Load Switch RDS(ON)
Другие IGBT... JMTN330N06A, JMTQ11DP03A, JMTQ120C03D, JMTQ120N03A, JMTQ120N03D, JMTQ120N04D, JMTQ130N04D, JMTQ130P04A, IRLB3034, JMTQ170C04D, JMTQ190N03A, JMTQ200P03A, JMTQ220N04D, JMTQ230N04D, JMTQ240C03D, JMTQ240N03A, JMTQ240N03D
