JMSL06120UQ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JMSL06120UQ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 33
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 60
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 42
A
Tjⓘ - Temperatura máxima de unión: 175
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19
nS
Cossⓘ - Capacitancia
de salida: 443
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0095
Ohm
Paquete / Cubierta:
PDFN3X3-8L
Búsqueda de reemplazo de JMSL06120UQ MOSFET
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JMSL06120UQ datasheet
6.1. Size:1237K jiejie micro
jmsl0612pp.pdf 
60V, 11A, 11.4 m N-channel Power SGT MOSFET JMSL0612PP Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 11 A Pb-free plating RDS(ON)_Typ(@VGS=10V 8.0 mW RDS(ON)_Typ(@VGS=4.5V 11.4 mW Applications Load Switch P
6.2. Size:1235K jiejie micro
jmsl0612pu.pdf
60V, 40A, 10.6m N-channel Power SGT MOSFET JMSL0612PU Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 40 A Pb-free plating RDS(ON)_Typ(@VGS=10V 7.4 mW RDS(ON)_Typ(@VGS=4.5V 10.6 mW Applications Load Switch PW
6.3. Size:409K jiejie micro
jmsl0612agq.pdf
JMSL0612AGQ 60V 9.5m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 52 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 9.5 m RDS(ON)_Typ (@ VGS = 4.5V) 12.0 m Halogen-free and RoHS-compliant AEC-Q101 Qualifi
6.4. Size:404K jiejie micro
jmsl0612akq.pdf
JMSL0612AKQ 60V 9.9m N-Ch Power MOSFET Features Product Summary Parameter Typ. Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th) 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 57 A RDS(ON) (@ VGS = 10V) 9.9 Pb-free Lead Plating m RDS(ON) (@ VGS = 4.5V) 12.6 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Appli
6.5. Size:1192K jiejie micro
jmsl0612pg.pdf
60V, 67A, 10.5m N-channel Power SGT MOSFET JMSL0612PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.9 V ID(@VGS=10V) 67 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 7.4 mW RDS(ON)_Typ(@VGS=4.5V 10.5 mW Applications Load Switch PWM Application Pow
6.6. Size:1193K jiejie micro
jmsl0612pgq.pdf
60V, 72A, 10.5m N-channel Power SGT MOSFET JMSL0612PGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 60 V 100% UIS Tested VGS(th)_Typ 1.9 V 100% Vds Tested ID(@VGS=10V) 72 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 7.4 mW AEC-Q101 Qualified RDS(ON)_Typ(@VGS=4.5V 10.5 mW Applications
6.7. Size:349K jiejie micro
jmsl0612ag.pdf
JMSL0612AG 60V 9.5m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 34 A RDS(ON)_Typ (@ VGS = 10V) 9.5 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 12.0 m Halogen-free and RoHS-compliant Applications Power Mana
6.8. Size:1266K jiejie micro
jmsl0612ppd.pdf
60V, 9.3A, 13.8m N-channel Dual Power SGT MOSFET JMSL0612PPD Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 9.3 A Pb-free plating RDS(ON)_Typ(@VGS=10V 10.3 mW RDS(ON)_Typ(@VGS=4.5V 13.8 mW Applications Load Switc
6.9. Size:296K jiejie micro
jmsl0612ak.pdf
JMSL0612AK 60V 9.9m N-Ch Power MOSFET Product Summary Features Parameter Low RDS(ON) Value Unit VDS 60 V Low Gate Charge VGS(th)_Typ 1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 52 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 9.9 m RDS(ON)_Typ (@ VGS = 4.5V) 12.6 m Halogen-free and RoHS-compliant Applications Power Mana
6.10. Size:307K jiejie micro
jmsl0612au.pdf
JMSL0612AU 60V 10.0m N-Ch Power MOSFET Features Product Summary Low RDS(ON) Parameter Value Unit VDS 60 V Low Gate Charge VGS(th)_Typ 1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 38 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 10.0 m RDS(ON)_Typ (@ VGS = 4.5V) Halogen-free and RoHS-compliant 12.3 m Applications Power Mana
6.11. Size:1254K jiejie micro
jmsl0612pk.pdf
60V, 51A, 9.3m N-channel Power SGT MOSFET JMSL0612PK Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 51 A Pb-free plating RDS(ON)_Typ(@VGS=10V 6.8 mW RDS(ON)_Typ(@VGS=4.5V 9.3 mW Applications Load Switch PWM
6.12. Size:308K jiejie micro
jmsl0612auq.pdf
JMSL0612AUQ 60V 10.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 36 A RDS(ON)_Typ (@ VGS = 10V) 10.0 Pb-free Lead Plating m RDS(ON)_Typ (@ VGS = 4.5V) 12.3 m Halogen-free and RoHS-compliant AEC-Q101 Qua
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History: HM3413
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