JMSL06120UQ - Даташиты. Аналоги. Основные параметры
Наименование производителя: JMSL06120UQ
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 33
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 42
A
Tj ⓘ - Максимальная температура канала: 175
°C
tr ⓘ -
Время нарастания: 19
ns
Cossⓘ - Выходная емкость: 443
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0095
Ohm
Тип корпуса: PDFN3X3-8L
Аналог (замена) для JMSL06120UQ
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подбор ⓘ MOSFET транзистора по параметрам
JMSL06120UQ Datasheet (PDF)
..1. Size:608K jiejie micro
jmsl06120uq.pdf 
60V, 42A, 10.9m N-channel Power SGT MOSFETJMSL06120UQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)Parameters Value Unit Low Gate ChargeVDSS 60 V 100% UIS TestedVGS(th)_Typ 2.0 V 100% Vds TestedID(@VGS=10V) 42 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 7.3 mRDS(ON)_Typ(@VGS=4.5V 10.9 m AEC-Q101 QualifiedApplications
6.1. Size:1237K jiejie micro
jmsl0612pp.pdf 
60V, 11A, 11.4 m N-channel Power SGT MOSFETJMSL0612PPProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 11 A Pb-free platingRDS(ON)_Typ(@VGS=10V 8.0 mWRDS(ON)_Typ(@VGS=4.5V 11.4 mWApplications Load Switch P
6.2. Size:1235K jiejie micro
jmsl0612pu.pdf 
60V, 40A, 10.6m N-channel Power SGT MOSFETJMSL0612PUProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 40 A Pb-free platingRDS(ON)_Typ(@VGS=10V 7.4 mWRDS(ON)_Typ(@VGS=4.5V 10.6 mWApplications Load Switch PW
6.3. Size:409K jiejie micro
jmsl0612agq.pdf 
JMSL0612AGQ60V 9.5m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 52 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)9.5 m RDS(ON)_Typ (@ VGS = 4.5V)12.0 m Halogen-free and RoHS-compliant AEC-Q101 Qualifi
6.4. Size:404K jiejie micro
jmsl0612akq.pdf 
JMSL0612AKQ60V 9.9m N-Ch Power MOSFETFeaturesProduct SummaryParameter Typ. Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 57 A RDS(ON) (@ VGS = 10V)9.9 Pb-free Lead Plating m RDS(ON) (@ VGS = 4.5V)12.6 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Appli
6.5. Size:1192K jiejie micro
jmsl0612pg.pdf 
60V, 67A, 10.5m N-channel Power SGT MOSFETJMSL0612PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds Tested VGS(th)_Typ 1.9 VID(@VGS=10V) 67 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 7.4 mWRDS(ON)_Typ(@VGS=4.5V 10.5 mWApplications Load Switch PWM Application Pow
6.6. Size:1193K jiejie micro
jmsl0612pgq.pdf 
60V, 72A, 10.5m N-channel Power SGT MOSFETJMSL0612PGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)ParametersValue Unit Low Gate ChargeVDSS 60 V 100% UIS TestedVGS(th)_Typ 1.9 V 100% Vds TestedID(@VGS=10V) 72 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 7.4 mW AEC-Q101 Qualified RDS(ON)_Typ(@VGS=4.5V 10.5 mWApplications
6.7. Size:349K jiejie micro
jmsl0612ag.pdf 
JMSL0612AG60V 9.5m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 34 A RDS(ON)_Typ (@ VGS = 10V)9.5 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)12.0 m Halogen-free and RoHS-compliantApplications Power Mana
6.8. Size:1266K jiejie micro
jmsl0612ppd.pdf 
60V, 9.3A, 13.8m N-channel Dual Power SGT MOSFETJMSL0612PPDProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 9.3 A Pb-free platingRDS(ON)_Typ(@VGS=10V 10.3 mWRDS(ON)_Typ(@VGS=4.5V 13.8 mWApplications Load Switc
6.9. Size:296K jiejie micro
jmsl0612ak.pdf 
JMSL0612AK60V 9.9m N-Ch Power MOSFETProduct SummaryFeaturesParameter Low RDS(ON) Value Unit VDS60 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 52 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)9.9 m RDS(ON)_Typ (@ VGS = 4.5V)12.6 m Halogen-free and RoHS-compliantApplications Power Mana
6.10. Size:307K jiejie micro
jmsl0612au.pdf 
JMSL0612AU60V 10.0m N-Ch Power MOSFETFeaturesProduct Summary Low RDS(ON) Parameter Value Unit VDS60 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 38 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)10.0 m RDS(ON)_Typ (@ VGS = 4.5V) Halogen-free and RoHS-compliant 12.3 mApplications Power Mana
6.11. Size:1254K jiejie micro
jmsl0612pk.pdf 
60V, 51A, 9.3m N-channel Power SGT MOSFETJMSL0612PKProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 51 A Pb-free platingRDS(ON)_Typ(@VGS=10V 6.8 mWRDS(ON)_Typ(@VGS=4.5V 9.3 mWApplications Load Switch PWM
6.12. Size:308K jiejie micro
jmsl0612auq.pdf 
JMSL0612AUQ60V 10.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 36 A RDS(ON)_Typ (@ VGS = 10V)10.0 Pb-free Lead Plating m RDS(ON)_Typ (@ VGS = 4.5V)12.3 m Halogen-free and RoHS-compliant AEC-Q101 Qua
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