JMSL0613APD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JMSL0613APD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 60
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 10.2
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7
nS
Cossⓘ - Capacitancia
de salida: 349
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0135
Ohm
Paquete / Cubierta:
SOP8
Búsqueda de reemplazo de JMSL0613APD MOSFET
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Selección ⓘ de transistores por parámetros
JMSL0613APD datasheet
..1. Size:310K jiejie micro
jmsl0613apd.pdf 
JMSL0613APD 60V 10.5m Dual N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 10.2 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 10.5 m RDS(ON)_Typ (@ VGS = 4.5V) 12.5 m Halogen-free and RoHS-compliant Applications P
7.1. Size:336K jiejie micro
jmsl0610agdq.pdf
JMSL0610AGDQ 60V 8.5m Dual N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 38 A RDS(ON)_Typ (@ VGS = 10V) 8.5 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 10.2 m Halogen-free and RoHS-compliant AE
7.2. Size:1237K jiejie micro
jmsl0612pp.pdf
60V, 11A, 11.4 m N-channel Power SGT MOSFET JMSL0612PP Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 11 A Pb-free plating RDS(ON)_Typ(@VGS=10V 8.0 mW RDS(ON)_Typ(@VGS=4.5V 11.4 mW Applications Load Switch P
7.3. Size:371K jiejie micro
jmsl0615agdq.pdf
JMSL0615AGDQ 60V 10.5m Dual N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 33 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 10.5 m RDS(ON)_Typ (@ VGS = 4.5V) 13.5 m Halogen-free and RoHS-compliant AEC-Q101
7.4. Size:284K jiejie micro
jmsl0615av.pdf
JMSL0615AV 60V 9.8m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 21 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 9.8 m RDS(ON)_Typ (@ VGS = 4.5V) 12.5 m Halogen-free and RoHS-compliant Applications Power Manag
7.5. Size:1235K jiejie micro
jmsl0612pu.pdf
60V, 40A, 10.6m N-channel Power SGT MOSFET JMSL0612PU Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 40 A Pb-free plating RDS(ON)_Typ(@VGS=10V 7.4 mW RDS(ON)_Typ(@VGS=4.5V 10.6 mW Applications Load Switch PW
7.6. Size:332K jiejie micro
jmsl0610agd.pdf
JMSL0610AGD 60V 8.5m Dual N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 35 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 8.5 m RDS(ON)_Typ (@ VGS = 4.5V) 10.2 m Halogen-free and RoHS-compliant Applications Powe
7.7. Size:409K jiejie micro
jmsl0612agq.pdf
JMSL0612AGQ 60V 9.5m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 52 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 9.5 m RDS(ON)_Typ (@ VGS = 4.5V) 12.0 m Halogen-free and RoHS-compliant AEC-Q101 Qualifi
7.8. Size:404K jiejie micro
jmsl0612akq.pdf
JMSL0612AKQ 60V 9.9m N-Ch Power MOSFET Features Product Summary Parameter Typ. Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th) 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 57 A RDS(ON) (@ VGS = 10V) 9.9 Pb-free Lead Plating m RDS(ON) (@ VGS = 4.5V) 12.6 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Appli
7.9. Size:313K jiejie micro
jmsl0615agd.pdf
JMSL0615AGD 60V 10.5m Dual N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 31 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 10.5 m RDS(ON)_Typ (@ VGS = 4.5V) 13.5 m Halogen-free and RoHS-compliant Applications Power M
7.10. Size:1192K jiejie micro
jmsl0612pg.pdf
60V, 67A, 10.5m N-channel Power SGT MOSFET JMSL0612PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.9 V ID(@VGS=10V) 67 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 7.4 mW RDS(ON)_Typ(@VGS=4.5V 10.5 mW Applications Load Switch PWM Application Pow
7.12. Size:1193K jiejie micro
jmsl0612pgq.pdf
60V, 72A, 10.5m N-channel Power SGT MOSFET JMSL0612PGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 60 V 100% UIS Tested VGS(th)_Typ 1.9 V 100% Vds Tested ID(@VGS=10V) 72 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 7.4 mW AEC-Q101 Qualified RDS(ON)_Typ(@VGS=4.5V 10.5 mW Applications
7.14. Size:1180K jiejie micro
jmsl0615pgdq.pdf
60V, 37A, 12.1m Dual N-channel Power SGT MOSFET JMSL0615PGDQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 60 V 100% UIS Tested VGS(th)_Typ 1.9 V 100% Vds Tested ID(@VGS=10V) 37 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 8.3 mW AEC-Q101 Qualified RDS(ON)_Typ(@VGS=4.5V 12.1 mW Application
7.15. Size:349K jiejie micro
jmsl0612ag.pdf
JMSL0612AG 60V 9.5m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 34 A RDS(ON)_Typ (@ VGS = 10V) 9.5 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 12.0 m Halogen-free and RoHS-compliant Applications Power Mana
7.16. Size:282K jiejie micro
jmsl0615aud.pdf
JMSL0615AUD 60V 11.0m Dual N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 24 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 11.0 m RDS(ON)_Typ (@ VGS = 4.5V) 14.0 m Halogen-free and RoHS-compliant Applications Powe
7.17. Size:310K jiejie micro
jmsl0615apd.pdf
JMSL0615APD 60V 12m Dual N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 9.7 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 12 m RDS(ON)_Typ (@ VGS = 4.5V) 15 m Halogen-free and RoHS-compliant Applications Power Ma
7.18. Size:1234K jiejie micro
jmsl0611pu.pdf
60V, 34A, 12.2m N-channel Power SGT MOSFET JMSL0611PU Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 34 A Pb-free plating RDS(ON)_Typ(@VGS=10V 9.0 mW RDS(ON)_Typ(@VGS=4.5V 12.2 mW Applications Load Switch PW
7.19. Size:1230K jiejie micro
jmsl0611pp.pdf
60V, 10A, 12.3m N-channel Power SGT MOSFET JMSL0611PP Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 10 A Pb-free plating RDS(ON)_Typ(@VGS=10V 9.1 mW RDS(ON)_Typ(@VGS=4.5V 12.3 mW Applications Load Switch PW
7.20. Size:1266K jiejie micro
jmsl0612ppd.pdf
60V, 9.3A, 13.8m N-channel Dual Power SGT MOSFET JMSL0612PPD Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 9.3 A Pb-free plating RDS(ON)_Typ(@VGS=10V 10.3 mW RDS(ON)_Typ(@VGS=4.5V 13.8 mW Applications Load Switc
7.21. Size:296K jiejie micro
jmsl0612ak.pdf
JMSL0612AK 60V 9.9m N-Ch Power MOSFET Product Summary Features Parameter Low RDS(ON) Value Unit VDS 60 V Low Gate Charge VGS(th)_Typ 1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 52 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 9.9 m RDS(ON)_Typ (@ VGS = 4.5V) 12.6 m Halogen-free and RoHS-compliant Applications Power Mana
7.22. Size:1271K jiejie micro
jmsl0611pg.pdf
60V, 69A, 12.3m N-channel Power SGT MOSFET JMSL0611PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 69 A Pb-free plating RDS(ON)_Typ(@VGS=10V 9.1 mW RDS(ON)_Typ(@VGS=4.5V 12.3 mW Applications Load Switch PW
7.23. Size:307K jiejie micro
jmsl0612au.pdf
JMSL0612AU 60V 10.0m N-Ch Power MOSFET Features Product Summary Low RDS(ON) Parameter Value Unit VDS 60 V Low Gate Charge VGS(th)_Typ 1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 38 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 10.0 m RDS(ON)_Typ (@ VGS = 4.5V) Halogen-free and RoHS-compliant 12.3 m Applications Power Mana
7.24. Size:1254K jiejie micro
jmsl0612pk.pdf
60V, 51A, 9.3m N-channel Power SGT MOSFET JMSL0612PK Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 51 A Pb-free plating RDS(ON)_Typ(@VGS=10V 6.8 mW RDS(ON)_Typ(@VGS=4.5V 9.3 mW Applications Load Switch PWM
7.25. Size:308K jiejie micro
jmsl0612auq.pdf
JMSL0612AUQ 60V 10.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 36 A RDS(ON)_Typ (@ VGS = 10V) 10.0 Pb-free Lead Plating m RDS(ON)_Typ (@ VGS = 4.5V) 12.3 m Halogen-free and RoHS-compliant AEC-Q101 Qua
7.26. Size:331K jiejie micro
jmsl0615ap.pdf
JMSL0615AP 60V 10m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 12.7 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 10 m RDS(ON)_Typ (@ VGS = 4.5V) 13 m Halogen-free and RoHS-compliant Applications Power Manageme
7.27. Size:1307K jiejie micro
jmsl0611pgd.pdf
60V, 31A, 13.7m Dual N-channel Power SGT MOSFET JMSL0611PGD Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 31 A RDS(ON)_Typ(@VGS=10V 10.7 mW Applications RDS(ON)_Typ(@VGS=4.5V 13.7 mW Load Switch PWM Application
Otros transistores... JMSL0612AU
, JMSL0612AUQ
, JMSL0612PG
, JMSL0612PGQ
, JMSL0612PK
, JMSL0612PP
, JMSL0612PPD
, JMSL0612PU
, 4435
, JMSL1018AK
, JMSL1018AKQ
, JMSL1018AP
, JMSL1018AUQ
, JMSL1018PG
, JMSL1018PGD
, JMSL1018PGQ
, JMSL1018PK
.
History: AP2R803GH
| JMTG130P04A
| AGM15N10AP
| JMTG3008D
| AO4838
| HSBA3052
| JMTG170N06A
