ZXMN2B14FH Todos los transistores

 

ZXMN2B14FH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXMN2B14FH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 4.3 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 872 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
   Paquete / Cubierta: SOT23
 

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ZXMN2B14FH Datasheet (PDF)

 ..1. Size:435K  diodes
 zxmn2b14fh.pdf pdf_icon

ZXMN2B14FH

ZXMN2B14FH20V SOT23 N-channel enhancement mode MOSFET with low gate drive capabilitySummaryV(BR)DSS RDS(on) ( )ID (A)0.055 @ VGS= 4.5V 4.30.075 @ VGS= 2.5V 3.7200.100 @ VGS= 1.8V 3.2DescriptionThis new generation of trench MOSFETs from Zetex features low on-resistance achievable with low gate drive.FeaturesD Low on-resistance Fast switching speedG Low

 0.1. Size:424K  zetex
 zxmn2b14fhta.pdf pdf_icon

ZXMN2B14FH

ZXMN2B14FH20V SOT23 N-channel enhancement mode MOSFET with low gate drive capabilitySummaryV(BR)DSS RDS(on) ( )ID (A)0.055 @ VGS= 4.5V 4.30.075 @ VGS= 2.5V 3.7200.100 @ VGS= 1.8V 3.2DescriptionThis new generation of trench MOSFETs from Zetex features low on-resistance achievable with low gate drive.FeaturesD Low on-resistance Fast switching speedG Low

 8.1. Size:585K  diodes
 zxmn2b03e6.pdf pdf_icon

ZXMN2B14FH

ZXMN2B03E620V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capabilitySummaryV(BR)DSS RDS(on) ( )ID (A)0.040 @ VGS= 4.5V 5.40.055 @ VGS= 2.5V 4.6200.075 @ VGS= 1.8V 4.0DescriptionThis new generation trench MOSFET from Zetex features low on-resistance achievable with low gate drive.FeaturesD Low on-resistance Fast switching speedG Low ga

 8.2. Size:391K  diodes
 zxmn2b01f.pdf pdf_icon

ZXMN2B14FH

ZXMN2B01F20V SOT23 N-channel enhancement mode MOSFET with low gate drive capabilitySummaryV(BR)DSS RDS(on) ( )ID (A)0.100 @ VGS= 4.5V 2.40.150 @ VGS= 2.5V 2.0200.200 @ VGS= 1.8V 1.7DescriptionThis new generation trench MOSFET from Zetex features low on-resistance achievable with low gate drive.FeaturesD Low on-resistance Fast switching speedG Low gate

MOSTRAR MÁS

Otros transistores... ZXMN2A02N8 , ZXMN2A02X8 , ZXMN2A03E6 , ZXMN2A04DN8 , ZXMN2A14F , ZXMN2AMC , ZXMN2B01F , ZXMN2B03E6 , IRF9540 , ZXMN2F30FH , ZXMN2F34FH , ZXMN2F34MA , DMG4466SSS , DMG4466SSSL , DMG4468LFG , DMG4468LK3 , DMG4496SSS .

History: CS20N60F | FQD6N40C | 2SK3604-01L | 2SK1009-01 | MMN65N03 | FQP11P06 | SIR836DP

 

 
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