ZXMN2F30FH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXMN2F30FH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.4 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 4.9 A
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.5 V
Carga de la puerta (Qg): 4.8 nC
Conductancia de drenaje-sustrato (Cd): 452 pF
Resistencia entre drenaje y fuente RDS(on): 0.045 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET ZXMN2F30FH
ZXMN2F30FH Datasheet (PDF)
zxmn2f30fh.pdf
ZXMN2F30FH20V SOT23 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)20 0.045 @ VGS= 4.5V 4.90.065 @ VGS= 2.5V 4.1DescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with low (2.5V) gate drive.FeaturesD Low on-resistance 2.5V gate drive capability SOT23 packageGApplicationsS Buck/Boost DC
zxmn2f30fh.pdf
Product specificationZXMN2F30FH20V SOT23 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)20 0.045 @ VGS= 4.5V 4.90.065 @ VGS= 2.5V 4.1DescriptionThis new generation Trench MOSFET from TY features low on-resistance achievable with low (2.5V) gate drive.FeaturesD Low on-resistance 2.5V gate drive capability SOT23 packageGApplications
zxmn2f30fhta.pdf
ZXMN2F30FH20V SOT23 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)20 0.045 @ VGS= 4.5V 4.90.065 @ VGS= 2.5V 4.1DescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with low (2.5V) gate drive.FeaturesD Low on-resistance 2.5V gate drive capability SOT23 packageGApplicationsS Buck/Boost DC
zxmn2f34ma.pdf
ZXMN2F34MA20V N-channel enhancement mode MOSFET in DFN322SummaryV(BR)DSS RDS(on) () ID (A)20 0.060 @ VGS= 4.5V 8.50.120 @ VGS= 2.5VDescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with low (2.5V) gate drive. The 2mm x 2mm DFN package provides superior thermal performance versus alternative leaded devicesFeaturesD Low
zxmn2f34fh.pdf
ZXMN2F34FH20V SOT23 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)20 0.060 @ VGS= 4.5V 4.00.120 @ VGS= 2.5V 2.9DescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with low (2.5V) gate drive.FeaturesD Low on-resistance 2.5V gate drive capability SOT23 packageGApplicationsS Buck/Boost DC-
zxmn2f34fh.pdf
Product specificationZXMN2F34FH20V SOT23 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)20 0.060 @ VGS= 4.5V 4.00.120 @ VGS= 2.5V 2.9DescriptionThis new generation Trench MOSFET from TY features low on-resistance achievable with low (2.5V) gate drive.FeaturesD Low on-resistance 2.5V gate drive capability SOT23 packageGApplicationsS
zxmn2f34mata.pdf
ZXMN2F34MA20V N-channel enhancement mode MOSFET in DFN322SummaryV(BR)DSS RDS(on) () ID (A)20 0.060 @ VGS= 4.5V 8.50.120 @ VGS= 2.5VDescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with low (2.5V) gate drive. The 2mm x 2mm DFN package provides superior thermal performance versus alternative leaded devicesFeaturesD Low
zxmn2f34fhta.pdf
ZXMN2F34FH20V SOT23 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)20 0.060 @ VGS= 4.5V 4.00.120 @ VGS= 2.5V 2.9DescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with low (2.5V) gate drive.FeaturesD Low on-resistance 2.5V gate drive capability SOT23 packageGApplicationsS Buck/Boost DC-
Otros transistores... ZXMN2A02X8 , ZXMN2A03E6 , ZXMN2A04DN8 , ZXMN2A14F , ZXMN2AMC , ZXMN2B01F , ZXMN2B03E6 , ZXMN2B14FH , 7N65 , ZXMN2F34FH , ZXMN2F34MA , DMG4466SSS , DMG4466SSSL , DMG4468LFG , DMG4468LK3 , DMG4496SSS , DMG4800LFG .
