ZXMN2F30FH Todos los transistores

 

ZXMN2F30FH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXMN2F30FH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4.9 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 452 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: SOT23
 

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ZXMN2F30FH Datasheet (PDF)

 ..1. Size:414K  diodes
 zxmn2f30fh.pdf pdf_icon

ZXMN2F30FH

ZXMN2F30FH20V SOT23 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)20 0.045 @ VGS= 4.5V 4.90.065 @ VGS= 2.5V 4.1DescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with low (2.5V) gate drive.FeaturesD Low on-resistance 2.5V gate drive capability SOT23 packageGApplicationsS Buck/Boost DC

 ..2. Size:109K  tysemi
 zxmn2f30fh.pdf pdf_icon

ZXMN2F30FH

Product specificationZXMN2F30FH20V SOT23 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)20 0.045 @ VGS= 4.5V 4.90.065 @ VGS= 2.5V 4.1DescriptionThis new generation Trench MOSFET from TY features low on-resistance achievable with low (2.5V) gate drive.FeaturesD Low on-resistance 2.5V gate drive capability SOT23 packageGApplications

 0.1. Size:411K  zetex
 zxmn2f30fhta.pdf pdf_icon

ZXMN2F30FH

ZXMN2F30FH20V SOT23 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)20 0.045 @ VGS= 4.5V 4.90.065 @ VGS= 2.5V 4.1DescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with low (2.5V) gate drive.FeaturesD Low on-resistance 2.5V gate drive capability SOT23 packageGApplicationsS Buck/Boost DC

 7.1. Size:407K  diodes
 zxmn2f34ma.pdf pdf_icon

ZXMN2F30FH

ZXMN2F34MA20V N-channel enhancement mode MOSFET in DFN322SummaryV(BR)DSS RDS(on) () ID (A)20 0.060 @ VGS= 4.5V 8.50.120 @ VGS= 2.5VDescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with low (2.5V) gate drive. The 2mm x 2mm DFN package provides superior thermal performance versus alternative leaded devicesFeaturesD Low

MOSTRAR MÁS

Otros transistores... ZXMN2A02X8 , ZXMN2A03E6 , ZXMN2A04DN8 , ZXMN2A14F , ZXMN2AMC , ZXMN2B01F , ZXMN2B03E6 , ZXMN2B14FH , K3569 , ZXMN2F34FH , ZXMN2F34MA , DMG4466SSS , DMG4466SSSL , DMG4468LFG , DMG4468LK3 , DMG4496SSS , DMG4800LFG .

History: HMS75N65T | ME6874-G | SVT044R5NT | HY1908M | APT3565BN | CHM5813ESQ2GP | RQ6E035AT

 

 
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