ZXMN2F30FH MOSFET. Datasheet pdf. Equivalent
Type Designator: ZXMN2F30FH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 4.9 A
Qgⓘ - Total Gate Charge: 4.8 nC
Cossⓘ - Output Capacitance: 452 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SOT23
ZXMN2F30FH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZXMN2F30FH Datasheet (PDF)
zxmn2f30fh.pdf
ZXMN2F30FH20V SOT23 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)20 0.045 @ VGS= 4.5V 4.90.065 @ VGS= 2.5V 4.1DescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with low (2.5V) gate drive.FeaturesD Low on-resistance 2.5V gate drive capability SOT23 packageGApplicationsS Buck/Boost DC
zxmn2f30fh.pdf
Product specificationZXMN2F30FH20V SOT23 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)20 0.045 @ VGS= 4.5V 4.90.065 @ VGS= 2.5V 4.1DescriptionThis new generation Trench MOSFET from TY features low on-resistance achievable with low (2.5V) gate drive.FeaturesD Low on-resistance 2.5V gate drive capability SOT23 packageGApplications
zxmn2f30fhta.pdf
ZXMN2F30FH20V SOT23 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)20 0.045 @ VGS= 4.5V 4.90.065 @ VGS= 2.5V 4.1DescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with low (2.5V) gate drive.FeaturesD Low on-resistance 2.5V gate drive capability SOT23 packageGApplicationsS Buck/Boost DC
zxmn2f34ma.pdf
ZXMN2F34MA20V N-channel enhancement mode MOSFET in DFN322SummaryV(BR)DSS RDS(on) () ID (A)20 0.060 @ VGS= 4.5V 8.50.120 @ VGS= 2.5VDescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with low (2.5V) gate drive. The 2mm x 2mm DFN package provides superior thermal performance versus alternative leaded devicesFeaturesD Low
zxmn2f34fh.pdf
ZXMN2F34FH20V SOT23 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)20 0.060 @ VGS= 4.5V 4.00.120 @ VGS= 2.5V 2.9DescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with low (2.5V) gate drive.FeaturesD Low on-resistance 2.5V gate drive capability SOT23 packageGApplicationsS Buck/Boost DC-
zxmn2f34fh.pdf
Product specificationZXMN2F34FH20V SOT23 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)20 0.060 @ VGS= 4.5V 4.00.120 @ VGS= 2.5V 2.9DescriptionThis new generation Trench MOSFET from TY features low on-resistance achievable with low (2.5V) gate drive.FeaturesD Low on-resistance 2.5V gate drive capability SOT23 packageGApplicationsS
zxmn2f34mata.pdf
ZXMN2F34MA20V N-channel enhancement mode MOSFET in DFN322SummaryV(BR)DSS RDS(on) () ID (A)20 0.060 @ VGS= 4.5V 8.50.120 @ VGS= 2.5VDescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with low (2.5V) gate drive. The 2mm x 2mm DFN package provides superior thermal performance versus alternative leaded devicesFeaturesD Low
zxmn2f34fhta.pdf
ZXMN2F34FH20V SOT23 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)20 0.060 @ VGS= 4.5V 4.00.120 @ VGS= 2.5V 2.9DescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with low (2.5V) gate drive.FeaturesD Low on-resistance 2.5V gate drive capability SOT23 packageGApplicationsS Buck/Boost DC-
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