JMSL0803MG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

..1. Size:1191K jiejie micro
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80V, 137A, 2.4m N-channel Power SGT MOSFETJMSL0803MGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 80 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 137 ARDS(ON)_Typ(@VGS=10V 2.4 mWApplications Load Switch PWM Application Power ManagementDG SPDFN

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JMSL0302AU30V 1.2m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low RDS(ON) VDS30 V High Current Capability VGS(th)_Typ1.7 V ESD Enhanced to HBM Rating up to 1.5kV ID (@ VGS = 10V) (1) 145 A 100% UIS Tested, 100% Rg Tested RDS(ON)_Typ (@ VGS = 10V)1.2 m RDS(ON)_Typ (@ VGS = 4.5V)2.0 mApplications Power Management i

9.2. Size:236K 1
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JMSL0302AG30V 1.3m N-Ch Power MOSFETFeatures Product SummaryParameter Typ. Unit Ultra-low RDS(ON) VDS30 V High Current Capability VGS(th)1.7 V ESD Enhanced to HBM Rating up to 1.5kV ID (@ VGS = 10V) (1) 178 A 100% UIS Tested, 100% Rg Tested RDS(ON) (@ VGS = 10V)1.3 m RDS(ON) (@ VGS = 4.5V)2.0 mApplications Power Management in Computing,

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JMSL0406AG40V 4.2m N-Ch Power MOSFETFeatures Product SummaryParameter Typ. Unit Ultra-low RDS(ON) VDS40 V Low Gate Charge VGS(th)1.7 V High Current Capability ID (@ VGS = 10V) (1) 70 A 100% UIS Tested, 100% Rg Tested RDS(ON) (@ VGS = 10V)4.2 mApplications Power Management in Computing, CE, IE 4.0, Communications Current Switching in DC/DC

9.4. Size:277K 1
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JMSL0606AG60V 4.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.8 V High Current Capability ID (@ VGS = 10V) (1) 97 A RDS(ON)_Typ(@ VGS = 10V)4.0 m 100% UIS Tested, 100% Rg Tested RDS(ON) _Typ(@ VGS = 4.5V)5.2 mApplications Power Managerment in Telecom., Industrial

9.5. Size:383K jiejie micro
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JMSL0630AG60V 22m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 25 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 22 m RDS(ON) (@ VGS = 4.5V)28 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom.,

9.6. Size:319K jiejie micro
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JMSL0609AP60V 7.5m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 13.6 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)7.5 m RDS(ON)_Typ (@ VGS = 4.5V)9.5 m Halogen-free and RoHS-compliantApplications Power Manag

9.7. Size:335K jiejie micro
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JMSL0303AU30V 1.8m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS30 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 119 A RDS(ON)_Typ (@ VGS = 10V)1.8 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)2.7 m Halogen-free and RoHS-compliantApplications Powe

9.8. Size:557K jiejie micro
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JMSL0406AGDQ40V 5.5mW Dual N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 49 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)5.5 mW RDS(ON)_Typ (@ VGS = 4.5V)7.0 mW Halogen-free and RoHS-compliant AEC-Q101 Qu

9.9. Size:397K jiejie micro
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JMSL0601BG60V 1.25m N-Ch Power MOSFETFeaturesProduct Summary Low RDS(ON)Parameter Value Unit Low Gate Charge VDS60 V VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 226 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.25 m Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 4.5V)1.8 mApplications Power Mana

9.10. Size:1308K jiejie micro
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40V, 95A, 6.4m N-channel Power SGT MOSFETJMSL04060GDQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) ParametersValue Unit Low Gate ChargeVDSS 40 V 100% UIS TestedVGS(th)_Typ 1.7 V 100% Vds TestedID(@VGS=10V) 95 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 4.8 mW AEC-Q101 Qualified RDS(ON)_Typ(@VGS=4.5V 6.4 mWApplications

9.11. Size:352K jiejie micro
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JMSL0606AKQ60V 4.6m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 93 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.6 m RDS(ON)_Typ (@ VGS = 4.5V)6.0 m Halogen-free and RoHS-compliant AEC-Q101 Qu

9.12. Size:285K jiejie micro
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JMSL0315AV30V 7.2m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS30 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 22 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)7.2 m RDS(ON)_Typ (@ VGS = 4.5V)10.5 m Halogen-free and RoHS-compliantApplications Power Manage

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40V, 150A, 3.0m N-channel Power SGT MOSFETJMSL0403PGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) ParametersValue Unit Low Gate ChargeVDSS 40 V 100% UIS TestedVGS(th)_Typ 1.6 V 100% Vds TestedID(@VGS=10V) 150 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 2.2 mW AEC-Q101 Qualified RDS(ON)_Typ(@VGS=4.5V 3.0 mWApplications

9.16. Size:336K jiejie micro
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JMSL0610AGDQ60V 8.5m Dual N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 38 A RDS(ON)_Typ (@ VGS = 10V)8.5 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)10.2 m Halogen-free and RoHS-compliant AE

9.17. Size:1197K jiejie micro
jmsl0403pk.pdf pdf_icon

40V, 78A, 4.5m N-channel Power SGT MOSFETJMSL0403PKProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 78 A Pb-free platingRDS(ON)_Typ(@VGS=10V 3.7 mWRDS(ON)_Typ(@VGS=4.5V 4.5 mWApplications Load Switch PWM

9.18. Size:347K jiejie micro
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JMSL0601AG60V 0.90m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 275 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)0.90 m RDS(ON)_Typ (@ VGS = 4.5V)1.3 m Halogen-free and RoHS-compliantApplications Power Mana

9.19. Size:1237K jiejie micro
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60V, 11A, 11.4 m N-channel Power SGT MOSFETJMSL0612PPProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 11 A Pb-free platingRDS(ON)_Typ(@VGS=10V 8.0 mWRDS(ON)_Typ(@VGS=4.5V 11.4 mWApplications Load Switch P

9.20. Size:371K jiejie micro
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JMSL0615AGDQ60V 10.5m Dual N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 33 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)10.5 m RDS(ON)_Typ (@ VGS = 4.5V)13.5 m Halogen-free and RoHS-compliant AEC-Q101

9.21. Size:347K jiejie micro
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JMSL0602AG60V 1.8m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 154 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.8 m RDS(ON)_Typ (@ VGS = 4.5V)2.4 m Halogen-free and RoHS-compliantApplications Power Manage

9.22. Size:305K jiejie micro
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JMSL0620AGDEQ60V 18m Dual N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low ON Resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 23 A ESD-enhanced Gate Pin @ HBM Class-2 of 1.1kV Typical RDS(ON)_Typ (@ VGS = 10V)18.0 m RDS(ON)_Typ (@ VGS = 4.5V)25 m Pb-free Lead Plati

9.23. Size:284K jiejie micro
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JMSL0615AV60V 9.8m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 21 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 9.8 m RDS(ON)_Typ (@ VGS = 4.5V)12.5 m Halogen-free and RoHS-compliantApplications Power Manag

9.24. Size:1265K jiejie micro
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60V, 11A, 11.7m N-channel Power SGT MOSFETJMSL0609PPDProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 11 A Pb-free platingRDS(ON)_Typ(@VGS=10V 9.5 mWRDS(ON)_Typ(@VGS=4.5V 11.7 mWApplications Load Switch P

9.25. Size:290K jiejie micro
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JMSL0406AK40V 4.5m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS40 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 73 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.5 m RDS(ON)_Typ (@ VGS = 4.5V)6.2 m Halogen-free and RoHS-compliantApplications Power M

9.26. Size:1193K jiejie micro
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60V, 79A, 8m N-channel Power SGT MOSFETJMSL0608PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 79 ARDS(ON)_Typ(@VGS=10V 6.2 mWRDS(ON)_Typ(@VGS=4.5V 8.0 mWApplications Load Switch PWM Application Power

9.27. Size:1235K jiejie micro
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60V, 40A, 10.6m N-channel Power SGT MOSFETJMSL0612PUProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 40 A Pb-free platingRDS(ON)_Typ(@VGS=10V 7.4 mWRDS(ON)_Typ(@VGS=4.5V 10.6 mWApplications Load Switch PW

9.28. Size:332K jiejie micro
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JMSL0610AGD60V 8.5m Dual N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 35 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)8.5 m RDS(ON)_Typ (@ VGS = 4.5V)10.2 m Halogen-free and RoHS-compliantApplications Powe

9.29. Size:1192K jiejie micro
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40V, 163A, 2.9m N-channel Power SGT MOSFETJMSL0402TGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 163 ARDS(ON)_Typ(@VGS=10V 1.9 mWApplications RDS(ON)_Typ(@VGS=4.5V 2.9 mW Load Switch PWM Application Pow

9.30. Size:303K jiejie micro
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JMSL0315AU30V 7.0m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS30 V 100% UIS Tested, 100% Rg Tested VGS(th)_Typ1.7 V Pb-free Lead Plating ID (@ VGS = 10V) (1) 43 A Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 10V)7.0 m RDS(ON)_Typ (@ VGS = 4.5V)10.6 mApplications Power Mgmt. in Computing, C

9.31. Size:1224K jiejie micro
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30V, 94A, 2.4m N-channel Power SGT MOSFETJMSL0302PUProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 94 ARDS(ON)_Typ(@VGS=10V 1.8 mWRDS(ON)_Typ(@VGS=4.5V 2.4 mWApplications Load Switch PWM Application Power

9.32. Size:320K jiejie micro
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JMSL0630AU60V 22m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 20 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 22 m RDS(ON) (@ VGS = 4.5V)30 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom.,

9.34. Size:400K jiejie micro
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JMSL0406AGQ40V 4.2m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 90 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.2 m RDS(ON)_Typ (@ VGS = 4.5V)5.8 m Halogen-free and RoHS-compliant AEC-Q101 Qu

9.35. Size:320K jiejie micro
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9.36. Size:1246K jiejie micro
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60V, 117A, 5.3m N-channel Power SGT MOSFETJMSL0606PEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 117 ARDS(ON)_Typ(@VGS=10V 4.2 mWRDS(ON)_Typ(@VGS=4.5V 5.3 mWApplications Load Switch PWM Application Po

9.37. Size:386K jiejie micro
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JMSL0630AGD60V 22m Dual N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 23 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 22 m RDS(ON) (@ VGS = 4.5V)28 m Halogen-free and RoHS-compliantApplications Power Managerment in

9.38. Size:306K jiejie micro
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JMSL0402AK40V 1.8m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS40 V Low Gate Charge VGS(th)_Typ1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 150 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.8 m RDS(ON)_Typ (@ VGS = 4.5V)2.2 m Halogen-free and RoHS-compliantApplications Power

9.39. Size:571K jiejie micro
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JMSL0403AGQ40V 2.5mW N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ1.5 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 128 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)2.5 mW RDS(ON)_Typ (@ VGS = 4.5V)3.3 mW Halogen-free and RoHS-compliant AEC-Q101 Qualifi

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JMSL0315APD30V 9.5m Dual N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS30 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 12.4 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 9.5 m RDS(ON)_Typ (@ VGS = 4.5V)12.3 m Halogen-free and RoHS-compliantApplications Mot

9.43. Size:301K jiejie micro
jmsl0406ap.pdf pdf_icon

JMSL0406AP40V 4.8m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS40 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 17.8 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.8 m RDS(ON)_Typ (@ VGS = 4.5V)6.0 m Halogen-free and RoHS-compliantApplications Power Manage

9.44. Size:297K jiejie micro
jmsl0303ag.pdf pdf_icon

JMSL0303AG30V 1.7m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS30 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 136 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.7 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE 4.0,

9.45. Size:343K jiejie micro
jmsl0606pu.pdf pdf_icon

JMSL0606PU60V 3.9m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 69 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.9 m RDS(ON)_Typ (@ VGS = 4.5V)5.1 m Halogen-free and RoHS-compliantApplications Power Man

9.46. Size:338K jiejie micro
jmsl0606auq.pdf pdf_icon

JMSL0606AUQ60V 5.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 59 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 5.0 m RDS(ON)_Typ (@ VGS = 4.5V)6.0 m Halogen-free and RoHS-compliant AEC-Q101

9.47. Size:281K jiejie micro
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JMSL0307AV30V 3.7m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS30 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 29 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)3.7 m RDS(ON)_Typ (@ VGS = 4.5V)5.3 m Halogen-free and RoHS-compliantApplications Power M

9.48. Size:409K jiejie micro
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JMSL0612AGQ60V 9.5m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 52 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)9.5 m RDS(ON)_Typ (@ VGS = 4.5V)12.0 m Halogen-free and RoHS-compliant AEC-Q101 Qualifi

9.49. Size:403K jiejie micro
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JMSL0402AGQ40V 1.6m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 183 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.6 m RDS(ON)_Typ (@ VGS = 4.5V)2.2 m Halogen-free and RoHS-compliant AEC-Q101 Q

9.50. Size:518K jiejie micro
jmsl0606au.pdf pdf_icon

JMSL0606AU60V 5.0mW N-Ch Power MOSFETProduct SummaryFeaturesParameter Typ. Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 52 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 5.0 mW RDS(ON) (@ VGS = 4.5V)6.6 mW Halogen-free and RoHS-compliantApplications Power Management in Compu

9.51. Size:523K jiejie micro
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40V, 355A, 1.1m N-channel Power SGT MOSFETJMSL0401PGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)Parameters Value Unit Low Gate ChargeVDSS 40 V 100% UIS TestedVGS(th)_Typ 1.6 V 100% Vds Tested ID(@VGS=10V) 355 ARDS(ON)_Typ(@VGS=10V 0.6 m Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=4.5V 1.1 m AEC-Q101 QualifiedApplications

9.52. Size:337K jiejie micro
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JMSL0609AUQ60V 7.5m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 44 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)7.5 m RDS(ON)_Typ (@ VGS = 4.5V)9.4 m Halogen-free and RoHS-compliant AEC-Q101 Qu

9.53. Size:319K jiejie micro
jmsl0402ag.pdf pdf_icon

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JMSL0406AKQ40V 4.7m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 78 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.7 m RDS(ON)_Typ (@ VGS = 4.5V)6.0 m Halogen-free and RoHS-compliant AEC-Q101

9.55. Size:1284K jiejie micro
jmsl0608pk.pdf pdf_icon

60V, 53A, 8.7m N-channel Power SGT MOSFETJMSL0608PKProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 53 ARDS(ON)_Typ(@VGS=10V 6.8 mWApplications RDS(ON)_Typ(@VGS=4.5V 8.7 mW Load Switch PWM Application Power

9.56. Size:1179K jiejie micro
jmsl0608pgd.pdf pdf_icon

60V, 37A, 11m Dual N-channel Power SGT MOSFETJMSL0608PGDProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 37 ARDS(ON)_Typ(@VGS=10V 8 mWApplications RDS(ON)_Typ(@VGS=4.5V 11 mW Load Switch PWM Application Pow

9.57. Size:294K jiejie micro
jmsl0307ag.pdf pdf_icon

JMSL0307AG30V 3.8m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS30 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 65 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)3.8 m RDS(ON)_Typ (@ VGS = 4.5V)5.8 m Halogen-free and RoHS-compliantApplications Power M

9.58. Size:400K jiejie micro
jmsl0620age.pdf pdf_icon

JMSL0620AGE60V 16m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Low ON Resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 31 A ESD-enhanced Gate Pin @ HBM Class-2 of 1.1kV Typical RDS(ON)_Typ (@ VGS = 10V)16.0 m RDS(ON)_Typ (@ VGS = 4.5V)23 m Pb-free Lead Plating, Hal

9.59. Size:293K jiejie micro
jmsl0302ak.pdf pdf_icon

JMSL0302AK30V 1.7m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS30 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 161 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.7 m RDS(ON)_Typ (@ VGS = 4.5V)2.2 m Halogen-free and RoHS-compliantApplications Power Mana

9.60. Size:413K jiejie micro
jmsl0601agq.pdf pdf_icon

JMSL0601AGQ60V 0.90m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.5 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 315 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)0.90 m RDS(ON)_Typ (@ VGS = 4.5V)1.3 m Halogen-free and RoHS-compliant AEC-Q101

9.61. Size:1236K jiejie micro
jmsl030spg.pdf pdf_icon

30V, 357A, 1.1m N-channel Power SGT MOSFETJMSL030SPGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 357 AApplications RDS(ON)_Typ(@VGS=10V 0.6 mWRDS(ON)_Typ(@VGS=4.5V 1.1 mW Load Switch PWM Application Powe

9.62. Size:343K jiejie micro
jmsl0315ard.pdf pdf_icon

JMSL0315ARD30V 6.5m Dual N-Ch Power MOSFETFeatures Product Summary (Q1 & Q2)Parameter Value Unit Low ON-resistance, RDS(ON) VDS30 V Low Gate Charge, Qg VGS(th)_Typ1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 37 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)6.5 m RDS(ON)_Typ (@ VGS = 4.5V)10.0 m Halogen-free and RoHS-compliantAppli

9.63. Size:336K jiejie micro
jmsl0315agd.pdf pdf_icon

JMSL0315AGD30V 7.5m Dual N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS30 V LowGateCharge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 37 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)7.5 m RDS(ON)_Typ (@ VGS = 4.5V)10.5 m Halogen-free and RoHS-compliantApplications Powe

9.64. Size:296K jiejie micro
jmsl0310au.pdf pdf_icon

JMSL0310AU30V 4.0m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS30 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 60 A RDS(ON)_Typ (@ VGS = 10V)4.0 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)6.0 m Halogen-free and RoHS-compliantApplications Power

9.65. Size:404K jiejie micro
jmsl0612akq.pdf pdf_icon

JMSL0612AKQ60V 9.9m N-Ch Power MOSFETFeaturesProduct SummaryParameter Typ. Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 57 A RDS(ON) (@ VGS = 10V)9.9 Pb-free Lead Plating m RDS(ON) (@ VGS = 4.5V)12.6 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Appli

9.66. Size:346K jiejie micro
jmsl0605agdq.pdf pdf_icon

JMSL0605AGDQ60V 4.4m Dual N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 61 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.4 m RDS(ON)_Typ (@ VGS = 4.5V)5.6 m Halogen-free and RoHS-compliant AEC-Q101

9.67. Size:378K jiejie micro
jmsl0603bgq.pdf pdf_icon

JMSL0603BGQ60V 2.4m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 147 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)2.4 m RDS(ON)_Typ (@ VGS = 4.5V)3.4 m Halogen-free and RoHS-compliant AEC-Q101

9.68. Size:313K jiejie micro
jmsl0615agd.pdf pdf_icon

JMSL0615AGD60V 10.5m Dual N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 31 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)10.5 m RDS(ON)_Typ (@ VGS = 4.5V)13.5 m Halogen-free and RoHS-compliantApplications Power M

9.69. Size:413K jiejie micro
jmsl0402akq.pdf pdf_icon

JMSL0402AKQ40V 1.9m N-Ch Power MOSFETFeaturesProduct SummaryParameter Typ. Unit Ultra-low RDS(ON) VDS40 V Low Gate Charge VGS(th)1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 211 A RDS(ON) (@ VGS = 10V)1.9 Pb-free Lead Plating m RDS(ON) (@ VGS = 4.5V)2.6 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automot

9.70. Size:1236K jiejie micro
jmsl04055uq.pdf pdf_icon

40V, 62A, 5.1m N-channel Power SGT MOSFETJMSL04055UQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) ParametersValue Unit Low Gate ChargeVDSS 40 V 100% UIS TestedVGS(th)_Typ 1.7 V 100% Vds TestedID(@VGS=10V) 62 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 3.5 mW AEC-Q101 Qualified RDS(ON)_Typ(@VGS=4.5V 5.1 mW Pb-free plating

9.71. Size:327K jiejie micro
jmsl0606ap.pdf pdf_icon

JMSL0606AP60V 5.3m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 15 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 5.3 m RDS(ON)_Typ (@ VGS = 4.5V)6.7 m Halogen-free and RoHS-compliantApplications Power

9.72. Size:298K jiejie micro
jmsl0302au.pdf pdf_icon

JMSL0302AU30V 1.2m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS30 V ESD Enhanced to HBM Rating up to 1.0kV VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 145 A RDS(ON)_Typ (@ VGS = 10V)1.2 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)2.0 m Halogen-free and RoHS-compliant

9.73. Size:1192K jiejie micro
jmsl0612pg.pdf pdf_icon

60V, 67A, 10.5m N-channel Power SGT MOSFETJMSL0612PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds Tested VGS(th)_Typ 1.9 VID(@VGS=10V) 67 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 7.4 mWRDS(ON)_Typ(@VGS=4.5V 10.5 mWApplications Load Switch PWM Application Pow

9.74. Size:400K jiejie micro
jmsl0620ageq.pdf pdf_icon

JMSL0620AGEQ60V 16m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Low ON Resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 32 A ESD-enhanced Gate Pin @ HBM Class-2 of 1.1kV Typical RDS(ON)_Typ (@ VGS = 10V)16.0 m RDS(ON)_Typ (@ VGS = 4.5V)23 m Pb-free Lead Plating, Ha

9.75. Size:608K jiejie micro
jmsl06120uq.pdf pdf_icon

60V, 42A, 10.9m N-channel Power SGT MOSFETJMSL06120UQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)Parameters Value Unit Low Gate ChargeVDSS 60 V 100% UIS TestedVGS(th)_Typ 2.0 V 100% Vds TestedID(@VGS=10V) 42 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 7.3 mRDS(ON)_Typ(@VGS=4.5V 10.9 m AEC-Q101 QualifiedApplications

9.76. Size:1273K jiejie micro
jmsl0602pg.pdf pdf_icon

60V, 209A, 2.1m N-channel Power SGT MOSFETJMSL0602PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 209 A Pb-free platingRDS(ON)_Typ(@VGS=10V 1.7 mWRDS(ON)_Typ(@VGS=4.5V 2.1 mWApplications Load Switch PW

9.77. Size:1193K jiejie micro
jmsl0612pgq.pdf pdf_icon

60V, 72A, 10.5m N-channel Power SGT MOSFETJMSL0612PGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)ParametersValue Unit Low Gate ChargeVDSS 60 V 100% UIS TestedVGS(th)_Typ 1.9 V 100% Vds TestedID(@VGS=10V) 72 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 7.4 mW AEC-Q101 Qualified RDS(ON)_Typ(@VGS=4.5V 10.5 mWApplications

9.78. Size:312K jiejie micro
jmsl0303ak.pdf pdf_icon

JMSL0303AK30V 2.7m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS30 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 118 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)2.7 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE 4.0, Co

9.79. Size:285K jiejie micro
jmsl0403au.pdf pdf_icon

9.80. Size:379K jiejie micro
jmsl0620aue.pdf pdf_icon

JMSL0620AUE60V 16mN-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 24 A ESD-enhanced Gate Pin @ HBM Class-2 of 1.1kV Typical RDS(ON)_Typ (@ VGS = 10V)16.0 m RDS(ON)_Typ (@ VGS = 4.5V)23 m Pb-free Lead Plating

9.81. Size:1379K jiejie micro
jmsl0611pud.pdf pdf_icon

60V, 34A, 14.6m Dual N-channel Power SGT MOSFETJMSL0611PUDProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 34 A Pb-free plating RDS(ON)_Typ(@VGS=10V 11.3 mWRDS(ON)_Typ(@VGS=4.5V 14.6 mWApplications Load Switch

9.82. Size:1180K jiejie micro
jmsl0615pgdq.pdf pdf_icon

60V, 37A, 12.1m Dual N-channel Power SGT MOSFETJMSL0615PGDQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) ParametersValue Unit Low Gate ChargeVDSS 60 V 100% UIS TestedVGS(th)_Typ 1.9 V 100% Vds TestedID(@VGS=10V) 37 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 8.3 mW AEC-Q101 Qualified RDS(ON)_Typ(@VGS=4.5V 12.1 mWApplication

9.83. Size:402K jiejie micro
jmsl0609akq.pdf pdf_icon

JMSL0609AKQ60V 7.4m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 59 A RDS(ON)_Typ (@ VGS = 10V)7.4 Pb-free Lead Plating m RDS(ON)_Typ (@ VGS = 4.5V)9.5 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Auto

9.84. Size:353K jiejie micro
jmsl0603ak.pdf pdf_icon

JMSL0603AK60V 2.6m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 145 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)2.6 m RDS(ON)_Typ (@ VGS = 4.5V)3.3 Halogen-free and RoHS-compliant mApplications Power M

9.85. Size:1233K jiejie micro
jmsl0608pp.pdf pdf_icon

60V, 14A, 9.4m N-channel Power SGT MOSFETJMSL0608PPProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 14 A Pb-free platingRDS(ON)_Typ(@VGS=10V 7.9 mWRDS(ON)_Typ(@VGS=4.5V 9.4 mWApplications Load Switch PWM

9.86. Size:560K jiejie micro
jmsl0401agq.pdf pdf_icon

JMSL0401AGQ40V 1.3mW N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 198 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.3 mW RDS(ON)_Typ (@ VGS = 4.5V)1.7 mW Halogen-free and RoHS-compliant AEC-Q101 Qualifi

9.87. Size:1291K jiejie micro
jmsl0603pg.pdf pdf_icon

60V, 154A, 2.7m N-channel Power SGT MOSFETJMSL0603PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 60 V 100% Vds TESTEDVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 154 A Pb-free platingRDS(ON)_Typ(@VGS=10V 2.1 mWRDS(ON)_Typ(@VGS=4.5V 2.7 mWApplications Load Switch PW

9.88. Size:1204K jiejie micro
jmsl0401pg.pdf pdf_icon

40V, 297A, 1.2m N-channel Power SGT MOSFETJMSL0401PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 1.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 297 ARDS(ON)_Typ(@VGS=10V 0.8 mWRDS(ON)_Typ(@VGS=4.5V 1.2 mWApplications Load Switch PWM Application Pow

9.89. Size:1190K jiejie micro
jmsl0406pk.pdf pdf_icon

40V, 97A, 5.6m N-channel Power SGT MOSFETJMSL0406PKProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 97 ARDS(ON)_Typ(@VGS=10V 4.1 mWRDS(ON)_Typ(@VGS=4.5V 5.6 mWApplications Load Switch PWM Application Power

9.90. Size:332K jiejie micro
jmsl0606pg.pdf pdf_icon

JMSL0606PG60V 3.2m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 114 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.2 m RDS(ON)_Typ (@ VGS = 4.5V)4.5 m Halogen-free and RoHS-compliantApplications Power Ma

9.91. Size:349K jiejie micro
jmsl0612ag.pdf pdf_icon

JMSL0612AG60V 9.5m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 34 A RDS(ON)_Typ (@ VGS = 10V)9.5 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)12.0 m Halogen-free and RoHS-compliantApplications Power Mana

9.92. Size:311K jiejie micro
jmsl0315ak.pdf pdf_icon

JMSL0315AK30V 9.5m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS30 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 41 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)9.5 m Halogen-free and RoHS-compliantApplications Power Mgmt. in Computing, CE, Digital Lifestyl

9.93. Size:1191K jiejie micro
jmsl0402mgq.pdf pdf_icon

40V, 222A, 2.5m N-channel Power SGT MOSFETJMSL0402MGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)ParametersValue Unit Low Gate ChargeVDSS 40 V 100% UIS TestedVGS(th)_Typ 1.9 V 100% Vds TestedID(@VGS=10V) 222 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 1.8 mW AEC-Q101 Qualified RDS(ON)_Typ(@VGS=4.5V 2.5 mWApplications

9.94. Size:348K jiejie micro
jmsl0609ag.pdf pdf_icon

JMSL0609AG60V 7.2m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 43 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)7.2 m RDS(ON)_Typ (@ VGS = 4.5V)9.0 m Halogen-free and RoHS-compliantApplications Power Managem

9.95. Size:1235K jiejie micro
jmsl040spg.pdf pdf_icon

40V, 330A, 1.0m N-channel Power SGT MOSFETJMSL040SPGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 1.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 330 ARDS(ON)_Typ(@VGS=10V 0.7 mWRDS(ON)_Typ(@VGS=4.5V 1.0 mWApplications Load Switch PWM Application Pow

9.96. Size:282K jiejie micro
jmsl0615aud.pdf pdf_icon

JMSL0615AUD60V 11.0m Dual N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 24 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)11.0 m RDS(ON)_Typ (@ VGS = 4.5V)14.0 m Halogen-free and RoHS-compliantApplications Powe

9.97. Size:414K jiejie micro
jmsl0609agq.pdf pdf_icon

JMSL0609AGQ60V 7.2m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 67 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)7.2 m RDS(ON)_Typ (@ VGS = 4.5V)9.0 m Halogen-free and RoHS-compliant AEC-Q101

9.98. Size:1201K jiejie micro
jmsl0601tg.pdf pdf_icon

60V, 294A, 1.1m N-channel Power SGT MOSFETJMSL0601TGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.3 V Halogen-free; RoHS-compliantID(@VGS=10V) 294 ARDS(ON)_Typ(@VGS=10V 0.9 mWRDS(ON)_Typ(@VGS=4.5V 1.1 mWApplications Load Switch PWM Application Pow

9.99. Size:1205K jiejie micro
jmsl0406pg.pdf pdf_icon

40V, 103A, 5.3m N-channel Power SGT MOSFETJMSL0406PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 1.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 103 ARDS(ON)_Typ(@VGS=10V 3.7 mWApplications RDS(ON)_Typ(@VGS=4.5V 5.3 mW Load Switch PWM Application Pow

9.100. Size:371K jiejie micro
jmsl0609au.pdf pdf_icon

JMSL0609AU60V 7.5m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 41 A RDS(ON)_Typ (@ VGS = 10V)7.5 Pb-free Lead Plating m RDS(ON)_Typ (@ VGS = 4.5V)9.4 m Halogen-free and RoHS-compliantApplications Power

9.101. Size:1190K jiejie micro
jmsl04055gq.pdf pdf_icon

40V, 119A, 4.6m N-channel Power SGT MOSFETJMSL04055GQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) ParametersValue Unit Low Gate ChargeVDSS 40 V 100% UIS TestedVGS(th)_Typ 1.8 V 100% Vds TestedID(@VGS=10V) 119 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 3.1 mW AEC-Q101 Qualified RDS(ON)_Typ(@VGS=4.5V 4.6 mWApplications

9.102. Size:310K jiejie micro
jmsl0615apd.pdf pdf_icon

JMSL0615APD60V 12m Dual N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 9.7 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 12 m RDS(ON)_Typ (@ VGS = 4.5V)15 m Halogen-free and RoHS-compliantApplications Power Ma

9.103. Size:297K jiejie micro
jmsl0302ag.pdf pdf_icon

JMSL0302AG30V 1.3m N-Ch Power MOSFETProduct SummaryFeaturesParameter Typ. Unit Ultra-low RDS(ON) VDS30 V ESD Enhanced to HBM Rating up to 1.0kV VGS(th)1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 178 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V)1.3 m RDS(ON) (@ VGS = 4.5V)2.0 m Halogen-free and RoHS-compliantApplications

9.104. Size:305K jiejie micro
jmsl0406au.pdf pdf_icon

9.105. Size:1179K jiejie micro
jmsl0406pgd.pdf pdf_icon

40V, 50A, 5.4m Dual N-channel Power SGT MOSFETJMSL0406PGDProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 50 ARDS(ON)_Typ(@VGS=10V 4.9 mWApplications RDS(ON)_Typ(@VGS=4.5V 5.4 mW Load Switch PWM Application

9.106. Size:1234K jiejie micro
jmsl0611pu.pdf pdf_icon

60V, 34A, 12.2m N-channel Power SGT MOSFETJMSL0611PUProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 34 A Pb-free platingRDS(ON)_Typ(@VGS=10V 9.0 mWRDS(ON)_Typ(@VGS=4.5V 12.2 mWApplications Load Switch PW

9.107. Size:296K jiejie micro
jmsl030sag.pdf pdf_icon

JMSL030SAG30V 0.55m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS30 V Low Gate Charge VGS(th)_Typ1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 327 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)0.55 m RDS(ON)_Typ (@ VGS = 4.5V)0.80 m Halogen-free and RoHS-compliantApplications Pow

9.108. Size:1234K jiejie micro
jmsl0406pu.pdf pdf_icon

40V, 59A, 4.7m N-channel Power SGT MOSFETJMSL0406PUProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 59 A Pb-free platingRDS(ON)_Typ(@VGS=10V 3.5 mWRDS(ON)_Typ(@VGS=6V 4.7 mWApplications Load Switch PWM Ap

9.109. Size:677K jiejie micro
jmsl060spgq.pdf pdf_icon

60V, 283A, 1.4m N-channel Power SGT MOSFETJMSL060SPGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate ChargeVDSS 60 V 100% UIS TestedVGS(th)_Typ 1.7 V 100% Vds Tested ID(@VGS=10V) 283 ARDS(ON)_Typ(@VGS=10V 1.0 m Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=4.5V 1.4 m AEC-Q101 QualifiedApplications

9.110. Size:302K jiejie micro
jmsl0406auq.pdf pdf_icon

9.111. Size:315K jiejie micro
jmsl0603bg.pdf pdf_icon

JMSL0603BG60V 2.4m N-Ch Power MOSFETFeatures Product Summary Ultra-low ON-resistance, RDS(ON)Parameter Value Unit VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 142 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)2.4 m Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 4.5V)3.4 mApplications

9.112. Size:320K jiejie micro
jmsl0406ag.pdf pdf_icon

9.113. Size:1230K jiejie micro
jmsl0611pp.pdf pdf_icon

60V, 10A, 12.3m N-channel Power SGT MOSFETJMSL0611PPProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 10 A Pb-free platingRDS(ON)_Typ(@VGS=10V 9.1 mWRDS(ON)_Typ(@VGS=4.5V 12.3 mWApplications Load Switch PW

9.114. Size:320K jiejie micro
jmsl0403ag.pdf pdf_icon

9.115. Size:380K jiejie micro
jmsl0302dg.pdf pdf_icon

JMSL0302DG30V 1.3m N-Ch Power MOSFETFeaturesProduct Summary Ultra-low ON-resistance, RDS(ON)Parameter Typ. Unit VDS Enhanced ESD @ HBM Rating up to 1.0kV 30 V VGS(th)1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 174 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V)1.3 m Halogen-free and RoHS-compliant RDS(ON) (@ VGS = 4.5V)2.3 mApplicat

9.116. Size:1237K jiejie micro
jmsl030stg.pdf pdf_icon

30V, 358A, 1.0m N-channel Power SGT MOSFETJMSL030STGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 358 AApplications RDS(ON)_Typ(@VGS=10V 0.5 mWRDS(ON)_Typ(@VGS=4.5V 1.0 mW Load Switch PWM Application Powe

9.117. Size:317K jiejie micro
jmsl0315ap.pdf pdf_icon

JMSL0315AP30V 8.2m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS30 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 14 A RDS(ON)_Typ (@ VGS = 10V)8.2 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)11.4 m Halogen-free and RoHS-compliantApplications Power Mgmt

9.118. Size:1281K jiejie micro
jmsl0303tg.pdf pdf_icon

30V, 162A, 2.5m N-channel Power SGT MOSFETJMSL0303TGProduct SummaryFeatures Excellent RDS(ON) and Low Gate Charge ParametersValue UnitVDSS 30 V 100% UIS TestedVGS(th)_Typ 1.6 V 100% Vds TestedID(@VGS=10V) 162 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 1.8 mWRDS(ON)_Typ(@VGS=4.5V 2.5 mWApplications Load Switch PWM Application Pow

9.119. Size:1234K jiejie micro
jmsl0303tu.pdf pdf_icon

30V, 88A, 2.7m N-channel Power SGT MOSFETJMSL0303TUProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 88 A Pb-free plating RDS(ON)_Typ(@VGS=10V 1.9 mWRDS(ON)_Typ(@VGS=4.5V 2.7 mWApplications Load Switch PWM Ap

9.120. Size:1228K jiejie micro
jmsl0403pu.pdf pdf_icon

40V, 85A, 2.8m N-channel Power SGT MOSFETJMSL0403PUProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 85 ARDS(ON)_Typ(@VGS=10V 1.9 mWApplications RDS(ON)_Typ(@VGS=4.5V 2.8 mW Load Switch PWM Application Power

9.121. Size:336K jiejie micro
jmsl0302bu.pdf pdf_icon

JMSL0302BU30V 1.5m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS30 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 135 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.5 m RDS(ON)_Typ (@ VGS = 4.5V)2.2 m Halogen-free and RoHS-compliantApplications Power

9.122. Size:343K jiejie micro
jmsl0315ag.pdf pdf_icon

JMSL0315AG30V 7.0m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS30 V High Current Capability VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 44 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)7.0 m RDS(ON)_Typ (@ VGS = 4.5V)10.0 m Halogen-free and RoHS-compliantApplications Powe

9.123. Size:277K jiejie micro
jmsl0315aud.pdf pdf_icon

JMSL0315AUD30V 8.8m Dual N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS30 V 100% UIS Tested, 100% Rg Tested VGS(th)_Typ1.7 V ID (@ VGS = 10V) (1) 36 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)8.8 m Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 4.5V)12.4 mApplications Power Mgmt. in Computing,

9.124. Size:284K jiejie micro
jmsl0606agd.pdf pdf_icon

JMSL0606AGD60V 6.4m N-Ch Power MOSFETProduct SummaryFeaturesParameter Typ. Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 55 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 6.4 m RDS(ON) (@ VGS = 4.5V)7.6 m Halogen-free and RoHS-compliantApplications Power Managerment

9.125. Size:296K jiejie micro
jmsl0301ag.pdf pdf_icon

JMSL0301AG30V 0.85m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS30 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 245 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)0.85 m RDS(ON)_Typ (@ VGS = 4.5V)1.3 m Halogen-free and RoHS-compliantApplications Powe

9.126. Size:370K jiejie micro
jmsl0402bgq.pdf pdf_icon

9.127. Size:1266K jiejie micro
jmsl0612ppd.pdf pdf_icon

60V, 9.3A, 13.8m N-channel Dual Power SGT MOSFETJMSL0612PPDProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 9.3 A Pb-free platingRDS(ON)_Typ(@VGS=10V 10.3 mWRDS(ON)_Typ(@VGS=4.5V 13.8 mWApplications Load Switc

9.128. Size:1240K jiejie micro
jmsl0605pg.pdf pdf_icon

60V, 100A, 5.5m N-channel Power SGT MOSFETJMSL0605PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 100 A Pb-free platingRDS(ON)_Typ(@VGS=10V 3.9 mWRDS(ON)_Typ(@VGS=4.5V 5.5 mWApplications Load Switch PW

9.129. Size:285K jiejie micro
jmsl0406agd.pdf pdf_icon

9.130. Size:410K jiejie micro
jmsl0606agq.pdf pdf_icon

JMSL0606AGQ60V 4.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 103 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)4.0 m RDS(ON)_Typ (@ VGS = 4.5V)5.2 m Halogen-free and RoHS-compliant AEC-Q101 Q

9.131. Size:1264K jiejie micro
jmsl0301tg.pdf pdf_icon

30V, 248A, 1.2 m N-channel Power SGT MOSFETJMSL0301TGProduct SummaryFeatures Excellent RDS(ON) and Low Gate Charge Parameters Value UnitVDSS 30 V 100% UIS TestedVGS(th)_Typ 1.7 V 100% Vds TestedID(@VGS=10V) 248 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 0.9 mWRDS(ON)_Typ(@VGS=4.5V 1.2 mWApplications Load Switch PWM Application Pow

9.132. Size:296K jiejie micro
jmsl0612ak.pdf pdf_icon

JMSL0612AK60V 9.9m N-Ch Power MOSFETProduct SummaryFeaturesParameter Low RDS(ON) Value Unit VDS60 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 52 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)9.9 m RDS(ON)_Typ (@ VGS = 4.5V)12.6 m Halogen-free and RoHS-compliantApplications Power Mana

9.133. Size:1261K jiejie micro
jmsl0402mtl.pdf pdf_icon

40V, 367A, 1.04m N-channel Power SGT MOSFETJMSL0402MTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 367 ARDS(ON)_Typ(@VGS=10V 0.97 mWApplications RDS(ON)_Typ(@VGS=4.5V 1.04 mW Load Switch PWM Application

9.134. Size:379K jiejie micro
jmsl0601bgq.pdf pdf_icon

JMSL0601BGQ60V 1.25m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 252 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.25 m RDS(ON)_Typ (@ VGS = 4.5V)1.8 m Halogen-free and RoHS-compliant AEC-Q1

9.135. Size:1260K jiejie micro
jmsl0402ptl.pdf pdf_icon

40V, 310A, 1.0m N-channel SGT MOSFETJMSL0402PTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 310 ARDS(ON)_Typ(@VGS=10V 0.9 mWApplications RDS(ON)_Typ(@VGS=4.5V 1.0 mW Load Switch PWM Application Power Ma

9.136. Size:325K jiejie micro
jmsl0606ag.pdf pdf_icon

JMSL0606AG60V 4.0m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 97 A RDS(ON)_Typ(@ VGS = 10V)4.0 m Pb-free Lead Plating RDS(ON) _Typ(@ VGS = 4.5V)5.2 m Halogen-free and RoHS-compliantApplications Power

9.137. Size:327K jiejie micro
jmsl0606ak.pdf pdf_icon

JMSL0606AK60V 4.6m N-Ch Power MOSFETProduct SummaryFeaturesParameter Typ. Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 90 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V)4.6 m RDS(ON) (@ VGS = 4.5V)6.0 m Halogen-free and RoHS-compliantApplications Power Management in

9.138. Size:1271K jiejie micro
jmsl0611pg.pdf pdf_icon

60V, 69A, 12.3m N-channel Power SGT MOSFETJMSL0611PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 69 A Pb-free platingRDS(ON)_Typ(@VGS=10V 9.1 mWRDS(ON)_Typ(@VGS=4.5V 12.3 mWApplications Load Switch PW

9.139. Size:307K jiejie micro
jmsl0612au.pdf pdf_icon

JMSL0612AU60V 10.0m N-Ch Power MOSFETFeaturesProduct Summary Low RDS(ON) Parameter Value Unit VDS60 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 38 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)10.0 m RDS(ON)_Typ (@ VGS = 4.5V) Halogen-free and RoHS-compliant 12.3 mApplications Power Mana

9.140. Size:318K jiejie micro
jmsl0620agde.pdf pdf_icon

JMSL0620AGDE60V 18m Dual N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low ON Resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 23 A ESD-enhanced Gate Pin @ HBM Class-2 of 1.1kV Typical RDS(ON)_Typ (@ VGS = 10V)18.0 m RDS(ON)_Typ (@ VGS = 4.5V)25 m Pb-free Lead Platin

9.141. Size:311K jiejie micro
jmsl0605agd.pdf pdf_icon

JMSL0605AGD60V 4.4m Dual N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 59 A RDS(ON)_Typ (@ VGS = 10V)4.4 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)5.6 m Halogen-free and RoHS-compliantApplicatio

9.142. Size:1232K jiejie micro
jmsl0302pg2.pdf pdf_icon

30V, 208A, 1.9m N-channel Power SGT MOSFETJMSL0302PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 208 ARDS(ON)_Typ(@VGS=10V 1.3 mWRDS(ON)_Typ(@VGS=4.5V 1.9 mWApplications Load Switch PWM Application Pow

9.143. Size:380K jiejie micro
jmsl0602agq.pdf pdf_icon

JMSL0602AGQ60V 1.8m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 172 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.8 m RDS(ON)_Typ (@ VGS = 4.5V)2.4 m Halogen-free and RoHS-compliant AEC-Q101

9.144. Size:1254K jiejie micro
jmsl0612pk.pdf pdf_icon

60V, 51A, 9.3m N-channel Power SGT MOSFETJMSL0612PKProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 51 A Pb-free platingRDS(ON)_Typ(@VGS=10V 6.8 mWRDS(ON)_Typ(@VGS=4.5V 9.3 mWApplications Load Switch PWM

9.145. Size:329K jiejie micro
jmsl0604agq.pdf pdf_icon

JMSL0604AGQ60V 3.6m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 112 A RDS(ON)_Typ(@ VGS = 10V) Pb-free Lead Plating 3.6 m RDS(ON) _Typ(@ VGS = 4.5V)4.7 m Halogen-free and RoHS-compliant AEC-Q101

9.146. Size:306K jiejie micro
jmsl0604ag.pdf pdf_icon

JMSL0604AG60V 3.9m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 98 A Pb-free Lead Plating RDS(ON)_Typ(@ VGS = 10V)3.9 m RDS(ON) _Typ(@ VGS = 4.5V)5.0 m Halogen-free and RoHS-compliantApplications Power Ma

9.147. Size:1256K jiejie micro
jmsl040smtl.pdf pdf_icon

40V, 486A, 0.6m N-channel Power SGT MOSFETJMSL040SMTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 1.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 486 ARDS(ON)_Typ(@VGS=10V 0.6 mWApplications Load Switch PWM Application Power ManagementPowerJE10x1

9.148. Size:1191K jiejie micro
jmsl0403pg.pdf pdf_icon

40V, 130A, 4.1m N-channel Power SGT MOSFETJMSL0403PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 1.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 130 ARDS(ON)_Typ(@VGS=10V 3.0 mWApplications RDS(ON)_Typ(@VGS=4.5V 4.1 mW Load Switch PWM Application Pow

9.149. Size:1257K jiejie micro
jmsl0608pu.pdf pdf_icon

60V, 47A, 8.2m N-channel Power Trench MOSFETJMSL0608PUProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 60 V 100% Vds TESTEDVGS(th)_Typ 1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 47 A Pb-free platingRDS(ON)_Typ(@VGS=10V 6.3 mWRDS(ON)_Typ(@VGS=4.5V 8.2 mWApplications Load Switch P

9.150. Size:310K jiejie micro
jmsl0613apd.pdf pdf_icon

JMSL0613APD60V 10.5m Dual N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 10.2 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 10.5 m RDS(ON)_Typ (@ VGS = 4.5V)12.5 m Halogen-free and RoHS-compliantApplications P

9.151. Size:349K jiejie micro
jmsl0609ak.pdf pdf_icon

JMSL0609AK60V 7.4m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 56 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 7.4 m RDS(ON)_Typ (@ VGS = 4.5V)9.5 m Halogen-free and RoHS-compliantApplications Power Managerme

9.152. Size:308K jiejie micro
jmsl0612auq.pdf pdf_icon

JMSL0612AUQ60V 10.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 36 A RDS(ON)_Typ (@ VGS = 10V)10.0 Pb-free Lead Plating m RDS(ON)_Typ (@ VGS = 4.5V)12.3 m Halogen-free and RoHS-compliant AEC-Q101 Qua

9.153. Size:328K jiejie micro
jmsl0609apd.pdf pdf_icon

JMSL0609APD60V 7.0m N-Ch Power MOSFETFeatures Product SummaryParameter Ultra-low RDS(ON) Value Unit VDS60 V Low Gate Charge VGS(th)1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 10 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)7.0 m RDS(ON)_Typ (@ VGS = 4.5V) Halogen-free and RoHS-compliant 9.5 mApplications Power Mana

9.154. Size:331K jiejie micro
jmsl0609agwq.pdf pdf_icon

JMSL0609AGWQ60V 7.2m N-Ch Power MOSFETFeatures Product Summary Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 67 A Wettable Flanks design support high manufacturability and RDS(ON)_Typ (@ VGS = 10V)7.2 mAutomated Optical Inspection (AOI) RDS(ON)_Typ (@ VGS

9.155. Size:330K jiejie micro
jmsl0606agwq.pdf pdf_icon

JMSL0606AGWQ60V 4.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS60 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 103 A Wettable Flanks design support high manufacturability and RDS(ON)_Typ (@ VGS = 10V)4.0 m RDS(ON)_Typ (@ VGS = 4.5V)5.2 mAutomated Optica

9.156. Size:1190K jiejie micro
jmsl0402pg.pdf pdf_icon

40V, 233A, 1.5m N-channel SGT MOSFETJMSL0402PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 1.4 V Halogen-free; RoHS-compliantID(@VGS=10V) 233 ARDS(ON)_Typ(@VGS=10V 1.3 mWApplications RDS(ON)_Typ(@VGS=4.5V 1.5 mW Load Switch PWM Application Power Man

9.157. Size:321K jiejie micro
jmsl0606ac jmsl0606ae.pdf pdf_icon

JMSL0606ACJMSL0606AE60V 5.2m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 115 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)5.2 m RDS(ON)_Typ (@ VGS = 4.5V)7.0 m Halogen-free and RoHS-compliantApplications

9.158. Size:666K jiejie micro
jmsl040sagq.pdf pdf_icon

9.159. Size:331K jiejie micro
jmsl0615ap.pdf pdf_icon

JMSL0615AP60V 10m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 12.7 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)10 m RDS(ON)_Typ (@ VGS = 4.5V)13 m Halogen-free and RoHS-compliantApplications Power Manageme

9.160. Size:1307K jiejie micro
jmsl0611pgd.pdf pdf_icon

60V, 31A, 13.7m Dual N-channel Power SGT MOSFETJMSL0611PGDProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 31 ARDS(ON)_Typ(@VGS=10V 10.7 mWApplications RDS(ON)_Typ(@VGS=4.5V 13.7 mW Load Switch PWM Application

9.161. Size:1192K jiejie micro
jmsl0602mg.pdf pdf_icon

60V, 257A, 1.3m N-channel Power SGT MOSFETJMSL0602MGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.4 V Halogen-free; RoHS-compliantID(@VGS=10V) 257 ARDS(ON)_Typ(@VGS=10V 1.0 mWRDS(ON)_Typ(@VGS=4.5V 1.3 mWApplications Load Switch PWM Application Po

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