DMG4800LSD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMG4800LSD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.17 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 8.5 A
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 798 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
Encapsulados: SO8
Búsqueda de reemplazo de DMG4800LSD MOSFET
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DMG4800LSD datasheet
dmg4800lsd.pdf
DMG4800LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SO-8 Low Input Capacitance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020D
dmg4800lk3.pdf
DMG4800LK3 N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case TO252-3L Case Material Molded Plastic, Green Molding Compound. Low Input Capacitance UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020
dmg4800lk3.pdf
isc N-Channel MOSFET Transistor DMG4800LK3 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 17m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
Otros transistores... ZXMN2F34MA, DMG4466SSS, DMG4466SSSL, DMG4468LFG, DMG4468LK3, DMG4496SSS, DMG4800LFG, DMG4800LK3, IRFP260, DMG4822SSD, DMG6402LDM, DMG8880LK3, DMG8880LSS, DMN100, DMN2600UFB, DMN3005LK3, DMN3007LSS
History: IXTP24P085T | IXTP260N055T2
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