SLD60N04TB Todos los transistores

 

SLD60N04TB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SLD60N04TB
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 59 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 66 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: TO252
 

 Búsqueda de reemplazo de SLD60N04TB MOSFET

   - Selección ⓘ de transistores por parámetros

 

SLD60N04TB Datasheet (PDF)

 ..1. Size:4818K  maple semi
 sld60n04tb.pdf pdf_icon

SLD60N04TB

SLD60N04TB40V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks advanced 66A, 40V, RDS(on),Typ = 5.3mTRENCH technology. This advanced technology has been es- Low gate charge (Qg,typ = 54nC)pecially tailored to minimize conduction loss, provide superior Fast switchingswitching performance, and withstand high energy pulse in t

 9.1. Size:1010K  maple semi
 sld60r650s2 slu60r650s2.pdf pdf_icon

SLD60N04TB

SLD60R650S2/SLU60R650S2600V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 7A, 600V, RDS(on)typ= 0.48@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 16nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingper

 9.2. Size:1022K  maple semi
 sld60r380s2 slu60r380s2.pdf pdf_icon

SLD60N04TB

SLD60R380S2/SLU60R380S2600V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 11A, 600V, RDS(on)typ= 0.3@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 22nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingper

Otros transistores... SLB65R380E7C , SLC013RN06G , SLD07RN10G , SLD10N65U , SLD110N02TB , SLD120N03TB , SLD140N03TB , SLD40N03TB , IRF520 , SLD65R1K2E7 , 24N6LG , 2SK737 , STF4N90K5 , SLF4N65SV , SLF65R180E7C , SLF65R1K2E7 , SLF65R280E7C .

History: 24N6LG

 

 
Back to Top

 


History: 24N6LG

SLD60N04TB   SLD60N04TB   SLD60N04TB  

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: APG130N06NF | APG130N06D | APG120N12NF | APG120N10NF | APG110N10NF | APG100N10D | AP9P20D | AP9N20Y | AP9N20P | AP9N20D | AP9928A | AP9926A | AP9435A | AP90P03NF | AP90P01D | AP90N06F

 

 

 
Back to Top

 

Popular searches

2n3903 transistor | 2n4360 | 2n2613 | c2166 transistor | 2sd330 | 20n60 | ksa1013 | mje15032g datasheet

 


 
.