SLD60N04TB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SLD60N04TB
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 59 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 66 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 30 nS
Cossⓘ - Capacitancia de salida: 150 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de SLD60N04TB MOSFET
SLD60N04TB Datasheet (PDF)
sld60n04tb.pdf

SLD60N04TB40V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks advanced 66A, 40V, RDS(on),Typ = 5.3mTRENCH technology. This advanced technology has been es- Low gate charge (Qg,typ = 54nC)pecially tailored to minimize conduction loss, provide superior Fast switchingswitching performance, and withstand high energy pulse in t
sld60r650s2 slu60r650s2.pdf

SLD60R650S2/SLU60R650S2600V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 7A, 600V, RDS(on)typ= 0.48@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 16nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingper
sld60r380s2 slu60r380s2.pdf

SLD60R380S2/SLU60R380S2600V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 11A, 600V, RDS(on)typ= 0.3@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 22nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingper
Otros transistores... SLB65R380E7C , SLC013RN06G , SLD07RN10G , SLD10N65U , SLD110N02TB , SLD120N03TB , SLD140N03TB , SLD40N03TB , 8N60 , SLD65R1K2E7 , , , , , , , .
History: SLD120N03TB
History: SLD120N03TB



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: SLD65R1K2E7 | SLD60N04TB | SLD40N03TB | SLD140N03TB | SLD120N03TB | SLD110N02TB | SLD10N65U | SLD07RN10G | SLC013RN06G | SLB65R380E7C | SLB60R105E7D | SLA10N03T | SLA08N10G | JVC502E | JVC113T | JVC105E
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