SLD60N04TB Datasheet and Replacement. Cross Reference Search

SLD60N04TB Datasheet (PDF)

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SLD60N04TB40V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks advanced 66A, 40V, RDS(on),Typ = 5.3mTRENCH technology. This advanced technology has been es- Low gate charge (Qg,typ = 54nC)pecially tailored to minimize conduction loss, provide superior Fast switchingswitching performance, and withstand high energy pulse in t

9.1. Size:1010K maple semi
sld60r650s2 slu60r650s2.pdf pdf_icon

SLD60R650S2/SLU60R650S2600V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 7A, 600V, RDS(on)typ= 0.48@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 16nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingper

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sld60r380s2 slu60r380s2.pdf pdf_icon

SLD60R380S2/SLU60R380S2600V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 11A, 600V, RDS(on)typ= 0.3@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 22nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingper

Datasheet: SLB65R380E7C , SLC013RN06G , SLD07RN10G , SLD10N65U , SLD110N02TB , SLD120N03TB , SLD140N03TB , SLD40N03TB , 8N60 , SLD65R1K2E7 , , , , , , , .