SLF65R600E7C Todos los transistores

 

SLF65R600E7C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SLF65R600E7C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 22 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: TO220F
 

 Búsqueda de reemplazo de SLF65R600E7C MOSFET

   - Selección ⓘ de transistores por parámetros

 

SLF65R600E7C Datasheet (PDF)

 ..1. Size:1679K  maple semi
 slf65r600e7c.pdf pdf_icon

SLF65R600E7C

SLF65R600E7C650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 8.4A*, 650V, RDS(on),Typ = 510mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 13nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switc

 8.1. Size:2126K  maple semi
 slf65r1k2e7.pdf pdf_icon

SLF65R600E7C

SLF65R1K2E7650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 4.9A*, 650V, RDS(on),Typ = 1.0vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 8nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switchin

 8.2. Size:2495K  maple semi
 slf65r380e7c.pdf pdf_icon

SLF65R600E7C

SLF65R380E7C650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 11A*, 650V, RDS(on),Typ = 320mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 22nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switch

 8.3. Size:766K  maple semi
 slf65r950s2.pdf pdf_icon

SLF65R600E7C

SLF65R950S2650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 5A, 650V, RDS(on) = 950m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingperformance, and withstand h

MOSTRAR MÁS

Otros transistores... 24N6LG , 2SK737 , STF4N90K5 , SLF4N65SV , SLF65R180E7C , SLF65R1K2E7 , SLF65R280E7C , SLF65R380E7C , IRFP064N , SLF70R280E7C , SLF70R380E7C , SLF80R830GT , SLF8N65SV , , , , .

 

 
Back to Top

 


 
.