SLF65R600E7C - описание и поиск аналогов

 

SLF65R600E7C. Аналоги и основные параметры

Наименование производителя: SLF65R600E7C

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 38 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 8.4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 21 ns

Cossⓘ - Выходная емкость: 22 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm

Тип корпуса: TO220F

Аналог (замена) для SLF65R600E7C

- подборⓘ MOSFET транзистора по параметрам

 

SLF65R600E7C даташит

 ..1. Size:1679K  maple semi
 slf65r600e7c.pdf pdf_icon

SLF65R600E7C

SLF65R600E7C 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 8.4A*, 650V, RDS(on),Typ = 510m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 13nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switc

 8.1. Size:2126K  maple semi
 slf65r1k2e7.pdf pdf_icon

SLF65R600E7C

SLF65R1K2E7 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 4.9A*, 650V, RDS(on),Typ = 1.0 vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 8nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switchin

 8.2. Size:2495K  maple semi
 slf65r380e7c.pdf pdf_icon

SLF65R600E7C

SLF65R380E7C 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 11A*, 650V, RDS(on),Typ = 320m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 22nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switch

 8.3. Size:766K  maple semi
 slf65r950s2.pdf pdf_icon

SLF65R600E7C

SLF65R950S2 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 5A, 650V, RDS(on) = 950m @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching performance, and withstand h

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... 24N6LG , 2SK737 , STF4N90K5 , SLF4N65SV , SLF65R180E7C , SLF65R1K2E7 , SLF65R280E7C , SLF65R380E7C , AO4468 , SLF70R280E7C , SLF70R380E7C , SLF80R830GT , SLF8N65SV , SLM120N06G , SLM150N04G , SLM160N04G , SLP65R180E7C .

History: 60N10I | SLF65R180E7C

 

 

 

 

↑ Back to Top
.