SLF70R280E7C MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SLF70R280E7C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 57 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 155 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 40 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de SLF70R280E7C MOSFET
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SLF70R280E7C datasheet
slf70r280e7c.pdf
SLF70R280E7C 700V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 14A*, 700V, RDS(on),Typ = 230m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 30nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switch
slf70r380e7c.pdf
SLF70R380E7C 700V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 11A*, 700V, RDS(on),Typ = 320m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 24nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switch
slp70r600s2 slf70r600s2.pdf
SLP70R600S2/SLF70R600S2 700V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7A, 700V, RDS(on)typ= 0.52 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 18nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching per
slp70r420s2 slf70r420s2.pdf
SLP70R420S2/SLF70R420S2 700V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 11A, 700V, RDS(on)typ= 0.37 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 24nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switc
Otros transistores... 2SK737 , STF4N90K5 , SLF4N65SV , SLF65R180E7C , SLF65R1K2E7 , SLF65R280E7C , SLF65R380E7C , SLF65R600E7C , IRF730 , SLF70R380E7C , SLF80R830GT , SLF8N65SV , SLM120N06G , SLM150N04G , SLM160N04G , SLP65R180E7C , SLP65R1K2E7 .
History: WML12N105C2 | DH020N03B | WMP11N65SR | WML125N12LG2
History: WML12N105C2 | DH020N03B | WMP11N65SR | WML125N12LG2
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