SLF70R280E7C MOSFET Datasheet: N-Ch, 700V, 14A. Full specification with pinout and replacement list

SLF70R280E7C Specs and Replacement

Type Designator: SLF70R280E7C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 57 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 155 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: TO220F

SLF70R280E7C substitution

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SLF70R280E7C datasheet

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slf70r280e7c.pdf pdf_icon

SLF70R280E7C 700V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 14A*, 700V, RDS(on),Typ = 230m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 30nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switch... See More ⇒

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SLF70R380E7C 700V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 11A*, 700V, RDS(on),Typ = 320m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 24nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switch... See More ⇒

8.2. Size:495K maple semi
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SLP70R600S2/SLF70R600S2 700V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7A, 700V, RDS(on)typ= 0.52 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 18nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching per... See More ⇒

8.3. Size:737K maple semi
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SLP70R420S2/SLF70R420S2 700V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 11A, 700V, RDS(on)typ= 0.37 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 24nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switc... See More ⇒