SLF80R830GT Todos los transistores

 

SLF80R830GT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SLF80R830GT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 57 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 33 nS

Cossⓘ - Capacitancia de salida: 21 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.83 Ohm

Encapsulados: TO220F

 Búsqueda de reemplazo de SLF80R830GT MOSFET

- Selecciónⓘ de transistores por parámetros

 

SLF80R830GT datasheet

 ..1. Size:2464K  maple semi
 slf80r830gt.pdf pdf_icon

SLF80R830GT

SLF80R830GT 800V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 7A*, 800V, RDS(on),Typ = 700m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 16nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switchin

 7.1. Size:614K  maple semi
 sld80r850sj slu80r850sj slp80r850sj slf80r850sj slb80r850sj sli80r850sj.pdf pdf_icon

SLF80R830GT

SLD80R850SJ,SLU80R850SJ,SLP80R850SJ SLF80R850SJ, SLB80R850SJ, SLI80R850SJ 800V N-Channel MOSFET Features General Description Features -7A, 800V, RDS(on) typ.= 0.8 @VGS = 10 V This Power MOSFET is produced using Maple semi s Advanced Super-Junction technology. - Low gate charge ( typical 25nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been es

 8.1. Size:626K  maple semi
 sld80r500sj slu80r500sj slp80r500sj slf80r500sj slb80r500sj sli80r500sj.pdf pdf_icon

SLF80R830GT

SLD80R500SJ,SLU80R500SJ,SLP80R500SJ SLF80R500SJ, SLB80R500SJ, SLI80R500SJ 800V N-Channel MOSFET Features General Description Features -11A, 800V, RDS(on) typ.= 0.46 @VGS = 10 V This Power MOSFET is produced using Maple semi s Advanced Super-Junction technology. - Low gate charge ( typical 38nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been

 8.2. Size:634K  maple semi
 slp80r240sj slf80r240sj slb80r240sj.pdf pdf_icon

SLF80R830GT

SLB/F/P80R240SJ 800V N-Channel MOSFET Features General Description Features - 20A, 800V, RDS(on) typ.= 0.22 @VGS = 10 V This Power MOSFET is produced using Maple semi s Advanced Super-Junction technology. - Low gate charge ( typical 70nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been especially tailored - High ruggedness - Low gate charge ( ty

MOSTRAR MÁS

Otros transistores... SLF4N65SV , SLF65R180E7C , SLF65R1K2E7 , SLF65R280E7C , SLF65R380E7C , SLF65R600E7C , SLF70R280E7C , SLF70R380E7C , IRF3205 , SLF8N65SV , SLM120N06G , SLM150N04G , SLM160N04G , SLP65R180E7C , SLP65R1K2E7 , SLP65R380E7C , SLP730S .

History: D2N65 | AP9579GM | 2SK1301 | DMP3030SN | AP05N50H-HF | KHB8D8N25F | PNMT6N1

 

 

 

 

↑ Back to Top
.