SLF80R830GT MOSFET Datasheet: N-Ch, 800V, 7A. Full specification with pinout and replacement list

SLF80R830GT Specs and Replacement

Type Designator: SLF80R830GT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 57 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 21 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.83 Ohm

Package: TO220F

SLF80R830GT substitution

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SLF80R830GT datasheet

..1. Size:2464K maple semi
slf80r830gt.pdf pdf_icon

SLF80R830GT 800V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 7A*, 800V, RDS(on),Typ = 700m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 16nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switchin... See More ⇒

7.1. Size:614K maple semi
sld80r850sj slu80r850sj slp80r850sj slf80r850sj slb80r850sj sli80r850sj.pdf pdf_icon

SLD80R850SJ,SLU80R850SJ,SLP80R850SJ SLF80R850SJ, SLB80R850SJ, SLI80R850SJ 800V N-Channel MOSFET Features General Description Features -7A, 800V, RDS(on) typ.= 0.8 @VGS = 10 V This Power MOSFET is produced using Maple semi s Advanced Super-Junction technology. - Low gate charge ( typical 25nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been es... See More ⇒

8.1. Size:626K maple semi
sld80r500sj slu80r500sj slp80r500sj slf80r500sj slb80r500sj sli80r500sj.pdf pdf_icon

SLD80R500SJ,SLU80R500SJ,SLP80R500SJ SLF80R500SJ, SLB80R500SJ, SLI80R500SJ 800V N-Channel MOSFET Features General Description Features -11A, 800V, RDS(on) typ.= 0.46 @VGS = 10 V This Power MOSFET is produced using Maple semi s Advanced Super-Junction technology. - Low gate charge ( typical 38nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been ... See More ⇒

8.2. Size:634K maple semi
slp80r240sj slf80r240sj slb80r240sj.pdf pdf_icon

SLB/F/P80R240SJ 800V N-Channel MOSFET Features General Description Features - 20A, 800V, RDS(on) typ.= 0.22 @VGS = 10 V This Power MOSFET is produced using Maple semi s Advanced Super-Junction technology. - Low gate charge ( typical 70nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been especially tailored - High ruggedness - Low gate charge ( ty... See More ⇒