SLP65R1K2E7 Todos los transistores

 

SLP65R1K2E7 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SLP65R1K2E7

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 68 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 39 nS

Cossⓘ - Capacitancia de salida: 14 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm

Encapsulados: TO220

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SLP65R1K2E7 datasheet

 ..1. Size:4335K  maple semi
 slp65r1k2e7.pdf pdf_icon

SLP65R1K2E7

SLP65R1K2E7 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 4.9A, 650V, RDS(on),Typ = 1.0 vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 8nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switching

 7.1. Size:4711K  maple semi
 slp65r180e7c.pdf pdf_icon

SLP65R1K2E7

SLP65R180E7C 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 22A, 650V, RDS(on),Typ = 150m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 34nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switchi

 8.1. Size:4689K  maple semi
 slp65r380e7c.pdf pdf_icon

SLP65R1K2E7

SLP65R380E7C 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 11A, 650V, RDS(on),Typ = 320m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 22nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switchi

 8.2. Size:569K  maple semi
 slp65r420s2 slf65r420s2.pdf pdf_icon

SLP65R1K2E7

SLP65R420S2/SLF65R420S2 650V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 11A, 650V, RDS(on)typ= 0.33 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 23nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching pe

MOSTRAR MÁS

Otros transistores... SLF70R280E7C , SLF70R380E7C , SLF80R830GT , SLF8N65SV , SLM120N06G , SLM150N04G , SLM160N04G , SLP65R180E7C , 50N06 , SLP65R380E7C , SLP730S , SLT65R180E7C , SLT70R180E7C , SLU4N65U , SLD65R280E7C , SLD65R380E7C , SLD65R600E7C .

 

 

 

 

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