SLP65R1K2E7 PDF and Equivalents Search

 

SLP65R1K2E7 Specs and Replacement

Type Designator: SLP65R1K2E7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 68 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39 nS

Cossⓘ - Output Capacitance: 14 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO220

SLP65R1K2E7 substitution

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SLP65R1K2E7 datasheet

 ..1. Size:4335K  maple semi
 slp65r1k2e7.pdf pdf_icon

SLP65R1K2E7

SLP65R1K2E7 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 4.9A, 650V, RDS(on),Typ = 1.0 vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 8nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switching... See More ⇒

 7.1. Size:4711K  maple semi
 slp65r180e7c.pdf pdf_icon

SLP65R1K2E7

SLP65R180E7C 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 22A, 650V, RDS(on),Typ = 150m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 34nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switchi... See More ⇒

 8.1. Size:4689K  maple semi
 slp65r380e7c.pdf pdf_icon

SLP65R1K2E7

SLP65R380E7C 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 11A, 650V, RDS(on),Typ = 320m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 22nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switchi... See More ⇒

 8.2. Size:569K  maple semi
 slp65r420s2 slf65r420s2.pdf pdf_icon

SLP65R1K2E7

SLP65R420S2/SLF65R420S2 650V N-channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 11A, 650V, RDS(on)typ= 0.33 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 23nC) This advanced technology has been especially tailored to - High ruggedness minimize conduction loss, provide superior switching - Fast switching pe... See More ⇒

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Detailed specifications: SLF70R280E7C, SLF70R380E7C, SLF80R830GT, SLF8N65SV, SLM120N06G, SLM150N04G, SLM160N04G, SLP65R180E7C, 50N06, SLP65R380E7C, SLP730S, SLT65R180E7C, SLT70R180E7C, SLU4N65U, SLD65R280E7C, SLD65R380E7C, SLD65R600E7C

Keywords - SLP65R1K2E7 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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