All MOSFET. SLP65R1K2E7 Datasheet

 

SLP65R1K2E7 Datasheet and Replacement


   Type Designator: SLP65R1K2E7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO220
 

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SLP65R1K2E7 Datasheet (PDF)

 ..1. Size:4335K  maple semi
 slp65r1k2e7.pdf pdf_icon

SLP65R1K2E7

SLP65R1K2E7650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 4.9A, 650V, RDS(on),Typ = 1.0vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 8nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switching

 7.1. Size:4711K  maple semi
 slp65r180e7c.pdf pdf_icon

SLP65R1K2E7

SLP65R180E7C650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 22A, 650V, RDS(on),Typ = 150mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 34nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switchi

 8.1. Size:4689K  maple semi
 slp65r380e7c.pdf pdf_icon

SLP65R1K2E7

SLP65R380E7C650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 11A, 650V, RDS(on),Typ = 320mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 22nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switchi

 8.2. Size:569K  maple semi
 slp65r420s2 slf65r420s2.pdf pdf_icon

SLP65R1K2E7

SLP65R420S2/SLF65R420S2650V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 11A, 650V, RDS(on)typ= 0.33@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 23nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingpe

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Datasheet: SLF70R280E7C , SLF70R380E7C , SLF80R830GT , SLF8N65SV , SLM120N06G , SLM150N04G , SLM160N04G , SLP65R180E7C , 50N06 , SLP65R380E7C , SLP730S , SLT65R180E7C , SLT70R180E7C , SLU4N65U , SLD65R280E7C , SLD65R380E7C , SLD65R600E7C .

History: WMQ023N03LG2 | IRFBC30APBF

Keywords - SLP65R1K2E7 MOSFET datasheet

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