SLD65R600E7C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SLD65R600E7C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 92 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 8.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 22 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Paquete / Cubierta: TO252
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SLD65R600E7C Datasheet (PDF)
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Otros transistores... SLP65R1K2E7 , SLP65R380E7C , SLP730S , SLT65R180E7C , SLT70R180E7C , SLU4N65U , SLD65R280E7C , SLD65R380E7C , IRFP260N , SLD80N02TB , SLD8N50UD , SLD8N65SV , SLD90N02TB , SLD90N03TB , SLD95R3K2GTZ , SLE65R1K2E7 , SLF10N65SV .
History: AOB1608L | RU7550S
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