SLD65R600E7C MOSFET Datasheet: N-Ch, 650V, 8.4A. Full specification with pinout and replacement list

SLD65R600E7C Specs and Replacement

Type Designator: SLD65R600E7C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 92 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 22 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO252

SLD65R600E7C substitution

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SLD65R600E7C datasheet

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SLD65R600E7C 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 8.4A, 650V, RDS(on),Typ = 510m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 13nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switch... See More ⇒

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SLD65R380E7C 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 11A, 650V, RDS(on),Typ = 320m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 22nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switchi... See More ⇒

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SLD65R280E7C 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 14A, 650V, RDS(on),Typ = 230m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 30nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switchi... See More ⇒

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SLD65R950S2 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 5A, 650V, RDS(on) = 950m @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching performance, and withstand h... See More ⇒