SLD90N03TB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SLD90N03TB
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 62.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 99 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 198 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0048 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de SLD90N03TB MOSFET
SLD90N03TB Datasheet (PDF)
sld90n03tb.pdf

SLD90N03TB30V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks - 99A 1), 30V, RDS(on)typ = 3.6m@VGS = 10 V RDS(on)typ = 6.5m@VGS = 4.5Vadvanced TRENCH technology.This advanced technology has been especially tailored to minimize - Very Low On-resistance RDS(ON)- Low Crssconduction loss, provide superior switching performance, and-
sld90n02tb.pdf

SLD90N02TB20V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks advanced 89.3A, 20V, RDS(on),Typ = 2.8mTRENCH technology. This advanced technology has been es- Low gate charge (Qg,typ = 38nC)pecially tailored to minimize conduction loss, provide superior Fast switchingswitching performance, and withstand high energy pulse in
Otros transistores... SLU4N65U , SLD65R280E7C , SLD65R380E7C , SLD65R600E7C , SLD80N02TB , SLD8N50UD , SLD8N65SV , SLD90N02TB , P55NF06 , SLD95R3K2GTZ , SLE65R1K2E7 , SLF10N65SV , SLF12N65SV , SLF16N65S , SLF95R760GTZ , SLH10RN20T , SLH60R043E7D .
History: SLF95R760GTZ | IXFK40N50Q2 | IRFBC30L | IRFBC30S | BLF6G20-230PRN | BLF6G20-110 | VHM40-06P1
History: SLF95R760GTZ | IXFK40N50Q2 | IRFBC30L | IRFBC30S | BLF6G20-230PRN | BLF6G20-110 | VHM40-06P1



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