SLH60R075GTDI MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SLH60R075GTDI datasheet

..1. Size:6140K maple semi
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SLH60R075GTDI 600V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 46A, 600V, RDS(on),Typ = 67.5m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 81nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switc

7.1. Size:511K maple semi
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SLH60R080SS 600V N-Channel MOSFET Features General Description Features - 47A, 600V, RDS(on) typ.= 68m @VGS =10 V This Power MOSFET is produced using Maple semi s Advanced Super-Junction technology. - Low gate charge ( typical 88nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been especially tailored - High ruggedness - Low gate charge ( typic

7.2. Size:569K maple semi
slh60r043e7d.pdf pdf_icon

SLH60R043E7D 600V N-Channel Multi-EPI Super-Junction MOSFET General Description Features This Power MOSFET is produced using Msemitek s - 65A, 600V, RDS(on)Typ =36m @VGS = 10 V advanced Superjunction MOSFET technology. - Fast Recovery Body-Diode This advanced technology has been especially tailored - Ultra high ruggedness to minimize on-state resistance, provide superior switching - F

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