SLH60R075GTDI Todos los transistores

 

SLH60R075GTDI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SLH60R075GTDI
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 431 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 46 A
   Tjⓘ - Temperatura máxima de unión: 155 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 147 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.076 Ohm
   Paquete / Cubierta: TO247
 

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SLH60R075GTDI Datasheet (PDF)

 ..1. Size:6140K  maple semi
 slh60r075gtdi.pdf pdf_icon

SLH60R075GTDI

SLH60R075GTDI600V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 46A, 600V, RDS(on),Typ = 67.5mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 81nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switc

 7.1. Size:511K  maple semi
 slh60r080ss.pdf pdf_icon

SLH60R075GTDI

SLH60R080SS 600V N-Channel MOSFET FeaturesGeneral Description Features - 47A, 600V, RDS(on) typ.= 68m@VGS =10 V This Power MOSFET is produced using Maple semis Advanced Super-Junction technology. - Low gate charge ( typical 88nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been especially tailored - High ruggedness - Low gate charge ( typic

 7.2. Size:569K  maple semi
 slh60r043e7d.pdf pdf_icon

SLH60R075GTDI

SLH60R043E7D600V N-Channel Multi-EPI Super-Junction MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks - 65A, 600V, RDS(on)Typ =36m@VGS = 10 Vadvanced Superjunction MOSFET technology. - Fast Recovery Body-DiodeThis advanced technology has been especially tailored - Ultra high ruggedness to minimize on-state resistance, provide superior switching - F

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