SLH60R075GTDI Specs and Replacement
Type Designator: SLH60R075GTDI
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 431 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 46 A
Tj ⓘ - Maximum Junction Temperature: 155 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 147 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.076 Ohm
Package: TO247
SLH60R075GTDI substitution
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SLH60R075GTDI datasheet
slh60r075gtdi.pdf
SLH60R075GTDI 600V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 46A, 600V, RDS(on),Typ = 67.5m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 81nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switc... See More ⇒
slh60r080ss.pdf
SLH60R080SS 600V N-Channel MOSFET Features General Description Features - 47A, 600V, RDS(on) typ.= 68m @VGS =10 V This Power MOSFET is produced using Maple semi s Advanced Super-Junction technology. - Low gate charge ( typical 88nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been especially tailored - High ruggedness - Low gate charge ( typic... See More ⇒
slh60r043e7d.pdf
SLH60R043E7D 600V N-Channel Multi-EPI Super-Junction MOSFET General Description Features This Power MOSFET is produced using Msemitek s - 65A, 600V, RDS(on)Typ =36m @VGS = 10 V advanced Superjunction MOSFET technology. - Fast Recovery Body-Diode This advanced technology has been especially tailored - Ultra high ruggedness to minimize on-state resistance, provide superior switching - F... See More ⇒
Detailed specifications: SLD95R3K2GTZ, SLE65R1K2E7, SLF10N65SV, SLF12N65SV, SLF16N65S, SLF95R760GTZ, SLH10RN20T, SLH60R043E7D, AON7408, SLH65R180E7C, SLH95R130GTZ, SLI13N50C, MD100N20, MD20N50, MD25N50, MD50N20, MD70N10
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