MD20N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MD20N50
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 230 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 75 nS
Cossⓘ - Capacitancia de salida: 290 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
Paquete / Cubierta: TO247
Búsqueda de reemplazo de MD20N50 MOSFET
MD20N50 Datasheet (PDF)
md20n50.pdf

Silicon N-Channel Power MOSFETDescriptionMD20N50 the silicon N-channel Enhanced MOSFETs, is obtainedby advanced MOSFET technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy.The transistor is suitable device for SMPS, high speed switching andgeneral purpose applications.General FeaturesV =500V, R
cmd20n06l.pdf

CMD20N06Lwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n
md20n60.pdf

DescriptionMD20N60,the silicon N-channel Enhanced MOSFETs,is obtainedby advanced MOSFET technology which reduce the conduction lossimprove switching performance and enhance the avalanche energy.The transistor is suitable device for SMPS, high speed switching andgeneral purpose applications.KEY CHARACTERISTICSParameter Value UnitVDS@Tj.max 600 VID 20 ARDS(ON).TyP 0.39
md20n65.pdf

Silicon N-Channel Power MOSFETDescriptionMD20N65,the silicon N-channel Enhanced MOSFETs,is obtainedby advanced MOSFET technology which reduce the conduction lossimprove switching performance and enhance the avalanche energy.The transistor is suitable device for SMPS, high speed switching andgeneral purpose applications.KEY CHARACTERISTICS V =650V, R
Otros transistores... SLF95R760GTZ , SLH10RN20T , SLH60R043E7D , SLH60R075GTDI , SLH65R180E7C , SLH95R130GTZ , SLI13N50C , MD100N20 , 2N7000 , MD25N50 , MD50N20 , MD70N10 , MDT30P10D , MDT4N65 , MPF10N65 , MPG08N68P , MPG08N68S .
History: BLF3G21-6 | TMP5N60AZ | MDT30P10D | IRFB7440 | IRFZ34NL | IXFQ12N80P | MD100N20
History: BLF3G21-6 | TMP5N60AZ | MDT30P10D | IRFB7440 | IRFZ34NL | IXFQ12N80P | MD100N20



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