MD20N50 MOSFET: N-Ch, 500V, 20A. Full datasheet with pinout, specifications and replacement transistor list

MD20N50 Datasheet (PDF)

..1. Size:877K cn minos
md20n50.pdf pdf_icon

Silicon N-Channel Power MOSFETDescriptionMD20N50 the silicon N-channel Enhanced MOSFETs, is obtainedby advanced MOSFET technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy.The transistor is suitable device for SMPS, high speed switching andgeneral purpose applications.General FeaturesV =500V, R

9.1. Size:808K cn vbsemi
cmd20n06l.pdf pdf_icon

CMD20N06Lwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n

9.2. Size:655K cn minos
md20n60.pdf pdf_icon

DescriptionMD20N60,the silicon N-channel Enhanced MOSFETs,is obtainedby advanced MOSFET technology which reduce the conduction lossimprove switching performance and enhance the avalanche energy.The transistor is suitable device for SMPS, high speed switching andgeneral purpose applications.KEY CHARACTERISTICSParameter Value UnitVDS@Tj.max 600 VID 20 ARDS(ON).TyP 0.39

9.3. Size:1030K cn minos
md20n65.pdf pdf_icon

Silicon N-Channel Power MOSFETDescriptionMD20N65,the silicon N-channel Enhanced MOSFETs,is obtainedby advanced MOSFET technology which reduce the conduction lossimprove switching performance and enhance the avalanche energy.The transistor is suitable device for SMPS, high speed switching andgeneral purpose applications.KEY CHARACTERISTICS V =650V, R

Datasheet: SLF95R760GTZ , SLH10RN20T , SLH60R043E7D , SLH60R075GTDI , SLH65R180E7C , SLH95R130GTZ , SLI13N50C , MD100N20 , IRF4905 , MD25N50 , MD50N20 , MD70N10 , MDT30P10D , MDT4N65 , MPF10N65 , MPG08N68P , MPG08N68S .