All MOSFET. MD20N50 Datasheet

 

MD20N50 Datasheet and Replacement


   Type Designator: MD20N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO247
 

 MD20N50 substitution

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MD20N50 Datasheet (PDF)

 ..1. Size:877K  cn minos
md20n50.pdf pdf_icon

MD20N50

Silicon N-Channel Power MOSFETDescriptionMD20N50 the silicon N-channel Enhanced MOSFETs, is obtainedby advanced MOSFET technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy.The transistor is suitable device for SMPS, high speed switching andgeneral purpose applications.General FeaturesV =500V, R

 9.1. Size:808K  cn vbsemi
cmd20n06l.pdf pdf_icon

MD20N50

CMD20N06Lwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n

 9.2. Size:655K  cn minos
md20n60.pdf pdf_icon

MD20N50

DescriptionMD20N60,the silicon N-channel Enhanced MOSFETs,is obtainedby advanced MOSFET technology which reduce the conduction lossimprove switching performance and enhance the avalanche energy.The transistor is suitable device for SMPS, high speed switching andgeneral purpose applications.KEY CHARACTERISTICSParameter Value UnitVDS@Tj.max 600 VID 20 ARDS(ON).TyP 0.39

 9.3. Size:1030K  cn minos
md20n65.pdf pdf_icon

MD20N50

Silicon N-Channel Power MOSFETDescriptionMD20N65,the silicon N-channel Enhanced MOSFETs,is obtainedby advanced MOSFET technology which reduce the conduction lossimprove switching performance and enhance the avalanche energy.The transistor is suitable device for SMPS, high speed switching andgeneral purpose applications.KEY CHARACTERISTICS V =650V, R

Datasheet: SLF95R760GTZ , SLH10RN20T , SLH60R043E7D , SLH60R075GTDI , SLH65R180E7C , SLH95R130GTZ , SLI13N50C , MD100N20 , 2N7000 , MD25N50 , MD50N20 , MD70N10 , MDT30P10D , MDT4N65 , MPF10N65 , MPG08N68P , MPG08N68S .

History: STH12NA60FI | SM4028NSU | IXFQ12N80P | SIHB22N65E | H5N3008P | FCH110N65F | IRF750A

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