MPF10N65 Todos los transistores

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 mpf10n65.pdf

Silicon N-Channel Power MOSFET Description The MPF10N65 uses advanced trench technology and design to provide excellent RDS(ON)with low gate charge. It can be used in a wide variety of applications. General Features VDS=10A ID=650V Schematic diagram RDS(on)(typ)=0.6 @VGS=10V,ID=4.0A Low Crss 18.5pF@25V Fast switching Improved dv/dt capability Application

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 tmp10n65 tmpf10n65.pdf

TMP10N65/TMPF10N65 TMP10N65G/TMPF10N65G VDSS = 715 V @Tjmax Features ID = 9.5A Low gate charge RDS(on) = 0.98 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP10N65 / TMPF10N65 TO-220 / TO-220F TMP10N65 / TMPF10N65 RoHS TMP10N

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 tmp10n65a tmpf10n65a.pdf

TMP10N65A(G)/TMPF10N65A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 9.5A

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 jmpf10n65bj.pdf

JMPF10N65BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 650V, 10A Load Switch RDS(ON)