All MOSFET. MPF10N65 Datasheet

 

MPF10N65 Datasheet and Replacement


   Type Designator: MPF10N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 106 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: TO220F
 

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MPF10N65 Datasheet (PDF)

 ..1. Size:461K  cn minos
 mpf10n65.pdf pdf_icon

MPF10N65

Silicon N-Channel Power MOSFETDescriptionThe MPF10N65 uses advanced trench technology anddesign to provide excellent RDS(ON)with low gate charge.It can be used in a wide variety of applications.General Features VDS=10AID=650VSchematic diagram RDS(on)(typ)=0.6@VGS=10V,ID=4.0A Low Crss:18.5pF@25V Fast switching Improved dv/dt capabilityApplication

 0.1. Size:577K  trinnotech
 tmp10n65 tmpf10n65.pdf pdf_icon

MPF10N65

TMP10N65/TMPF10N65 TMP10N65G/TMPF10N65G VDSS = 715 V @Tjmax Features ID = 9.5A Low gate charge RDS(on) = 0.98 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP10N65 / TMPF10N65 TO-220 / TO-220F TMP10N65 / TMPF10N65 RoHS TMP10N

 0.2. Size:607K  trinnotech
 tmp10n65a tmpf10n65a.pdf pdf_icon

MPF10N65

TMP10N65A(G)/TMPF10N65A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 650V 9.5A

 0.3. Size:491K  jiejie micro
 jmpf10n65bj.pdf pdf_icon

MPF10N65

JMPF10N65BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 650V, 10A Load SwitchRDS(ON)

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Datasheet: SLI13N50C , MD100N20 , MD20N50 , MD25N50 , MD50N20 , MD70N10 , MDT30P10D , MDT4N65 , IRF9540N , MPG08N68P , MPG08N68S , MPG120N06P , MPG120N06S , MPG150N10P , MPG150N10S , MPT035N08P , MPT035N08S .

History: TMP7N60Z | APQ16SN06AA | TMP16N60 | STP5N30FI | IXFR15N80Q | B4N80 | MDF8N60BTH

Keywords - MPF10N65 MOSFET datasheet

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