MD50N50 Todos los transistores

 ..1. Size:302K  cn minos
 md50n50.pdf

Silicon N-Channel Power MOSFET Description The MD50N50 uses advanced technology and design to provide excellent RDS(ON) . It can be used in a wide variety of applications. General Features V =500V,I =50A DS D Low ON Resistance Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Application Power switching application TO-247 Adapter and

 9.1. Size:860K  cn vbsemi
 cmd50n06b.pdf

CMD50N06B www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit

 9.2. Size:656K  cn minos
 md50n20.pdf

Silicon N-Channel Power MOSFET Description MD50N20 the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. General Features V =250V, R