MD50N50 Datasheet and Replacement
Type Designator: MD50N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 141 nS
Cossⓘ - Output Capacitance: 751.2 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO247
MD50N50 substitution
MD50N50 Datasheet (PDF)
md50n50.pdf

Silicon N-Channel Power MOSFETDescriptionThe MD50N50 uses advanced technology and designto provide excellent RDS(ON) . It can be used in a widevariety of applications.General Features V =500V,I =50ADS D Low ON Resistance Low Reverse transfer capacitances 100% Single Pulse avalanche energy TestApplication Power switching applicationTO-247 Adapter and
cmd50n06b.pdf

CMD50N06Bwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit
md50n20.pdf

Silicon N-Channel Power MOSFETDescriptionMD50N20 the silicon N-channel Enhanced MOSFETs, is obtainedby advanced MOSFET technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy.The transistor is suitable device for SMPS, high speed switching andgeneral purpose applications.General FeaturesV =250V, R
Datasheet: MPG120N06P , MPG120N06S , MPG150N10P , MPG150N10S , MPT035N08P , MPT035N08S , FTP06N06N , MD40N50 , 5N65 , MDT35P10D , MDT40P10D , MDT80N06D , MP13N50 , MP5N50 , MPF4N65 , MPF7N65 , MPG100N03P .
Keywords - MD50N50 MOSFET datasheet
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History: AOK60N30 | 2SK2726



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