MDT18N10D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MDT18N10D 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 110 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.115 Ohm
Encapsulados: TO252
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MDT18N10D datasheet
mdt18n10d.pdf
100V N-Channel Power MOSFET DESCRIPTION The MDT18N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. Application Power switching application Hard switched and High frequency circuits Uninterruptible power supply Schematic diagram KEY CHARACTERISTICS V = 100V,I = 18A DS D R
mdt18n20.pdf
Silicon N-Channel Power MOSFET Description MDT18N20, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Schematic diagram V =200V,I =18A
mp18n20 mpf18n20 mdp18n20 mdt18n20.pdf
Description MP18N20, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 200 V DS I 18 A D R 0.13 DS(ON).Typ
Otros transistores... MPG90N08S, MPT012N08T, MPT023N10T, MPT028N10P, MDT12N10L, MDT13N10D, MDT15N10, MDT15P04D, IRLZ44N, MDT18N20, MDT20N06, MDT20P04D, MDT2N60, MDT30N06L, MDT30N10, MDT30N10D, MDT40N06D
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