MDT18N10D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MDT18N10D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 110 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.115 Ohm
Paquete / Cubierta: TO252
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MDT18N10D Datasheet (PDF)
mdt18n10d.pdf

100V N-Channel Power MOSFETDESCRIPTIONThe MDT18N10D uses advanced trench technology toprovide excellent RDS(ON), low gate charge. It can be usedin a wide variety of applications.Application Power switching application Hard switched and High frequency circuits Uninterruptible power supplySchematic diagramKEY CHARACTERISTICS V = 100V,I = 18ADS DR
mdt18n20.pdf

Silicon N-Channel Power MOSFETDescriptionMDT18N20, the silicon N-channel Enhanced MOSFETs,is obtained by advanced MOSFET technology which reducethe conduction loss, improve switching performance andenhance the avalanche energy. The transistor is suitable devicefor SMPS, high speed switching and general purpose applications.KEY CHARACTERISTICSSchematic diagram V =200V,I =18A
mp18n20 mpf18n20 mdp18n20 mdt18n20.pdf

DescriptionMP18N20, the silicon N-channel EnhancedMOSFETs, is obtained by advanced MOSFETtechnology which reduce the conduction loss,improve switching performance and enhance theavalanche energy. The transistor is suitabledevice for SMPS, high speed switching andgeneral purpose applications.KEY CHARACTERISTICSParameter Value UnitV 200 VDSI 18 ADR 0.13 DS(ON).Typ
Otros transistores... MPG90N08S , MPT012N08T , MPT023N10T , MPT028N10P , MDT12N10L , MDT13N10D , MDT15N10 , MDT15P04D , IRFB4110 , MDT18N20 , MDT20N06 , MDT20P04D , MDT2N60 , MDT30N06L , MDT30N10 , MDT30N10D , MDT40N06D .



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