MDT18N10D Datasheet and Replacement. Cross Reference Search

MDT18N10D Datasheet (PDF)

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100V N-Channel Power MOSFETDESCRIPTIONThe MDT18N10D uses advanced trench technology toprovide excellent RDS(ON), low gate charge. It can be usedin a wide variety of applications.Application Power switching application Hard switched and High frequency circuits Uninterruptible power supplySchematic diagramKEY CHARACTERISTICS V = 100V,I = 18ADS DR

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Silicon N-Channel Power MOSFETDescriptionMDT18N20, the silicon N-channel Enhanced MOSFETs,is obtained by advanced MOSFET technology which reducethe conduction loss, improve switching performance andenhance the avalanche energy. The transistor is suitable devicefor SMPS, high speed switching and general purpose applications.KEY CHARACTERISTICSSchematic diagram V =200V,I =18A

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mp18n20 mpf18n20 mdp18n20 mdt18n20.pdf pdf_icon

DescriptionMP18N20, the silicon N-channel EnhancedMOSFETs, is obtained by advanced MOSFETtechnology which reduce the conduction loss,improve switching performance and enhance theavalanche energy. The transistor is suitabledevice for SMPS, high speed switching andgeneral purpose applications.KEY CHARACTERISTICSParameter Value UnitV 200 VDSI 18 ADR 0.13 DS(ON).Typ

Datasheet: MPG90N08S , MPT012N08T , MPT023N10T , MPT028N10P , MDT12N10L , MDT13N10D , MDT15N10 , MDT15P04D , IRFB4110 , MDT18N20 , MDT20N06 , MDT20P04D , MDT2N60 , MDT30N06L , MDT30N10 , MDT30N10D , MDT40N06D .