MDT30N06L Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MDT30N06L 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 44 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.4 nS
Cossⓘ - Capacitancia de salida: 76 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
Encapsulados: TO252
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MDT30N06L datasheet
mdt30n06l.pdf
60V N-Channel Power MOSFET DESCRIPTION The MDT30N06L uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS VDS = 60V,ID= 30A RDS(ON)
mdt30n10d mpg30n10p.pdf
100V N-Channel Power MOSFET DESCRIPTION The MPG30N10 uses advanced trench technology toprovide excellent R , low gate charge. It can be used in a wide DS(ON) variety of applications. KEY CHARACTERISTICS V = 100V,I =30A DS D R
mdt30n10.pdf
100V N-Channel Power MOSFET DESCRIPTION The MDT30N10 uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) in a wide variety of applications. KEY CHARACTERISTICS V = 100V,I = 30A R
mmdt3052dw.pdf
MMDT3052DW ( NPN+NPN) Silicon Epitaxial Planar Transistor Features Each transistor elements are independent Applications For low frequency amplify application MARKING 5G Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 6 V Collector Current IC 200 mA Power Dissipation Ptot 150 mW Junction Temperature
Otros transistores... MDT13N10D, MDT15N10, MDT15P04D, MDT18N10D, MDT18N20, MDT20N06, MDT20P04D, MDT2N60, IRFB4227, MDT30N10, MDT30N10D, MDT40N06D, MDT40N10D, MDT50N06D, MPF2N60, MPF3N150, MPF40N25
History: MDT15N10 | MPG60N10P
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