MDT30N06L Datasheet. Specs and Replacement
Type Designator: MDT30N06L 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.4 nS
Cossⓘ - Output Capacitance: 76 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO252
MDT30N06L substitution
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MDT30N06L datasheet
mdt30n06l.pdf
60V N-Channel Power MOSFET DESCRIPTION The MDT30N06L uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS VDS = 60V,ID= 30A RDS(ON) ... See More ⇒
mdt30n10d mpg30n10p.pdf
100V N-Channel Power MOSFET DESCRIPTION The MPG30N10 uses advanced trench technology toprovide excellent R , low gate charge. It can be used in a wide DS(ON) variety of applications. KEY CHARACTERISTICS V = 100V,I =30A DS D R ... See More ⇒
mdt30n10.pdf
100V N-Channel Power MOSFET DESCRIPTION The MDT30N10 uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) in a wide variety of applications. KEY CHARACTERISTICS V = 100V,I = 30A R ... See More ⇒
mmdt3052dw.pdf
MMDT3052DW ( NPN+NPN) Silicon Epitaxial Planar Transistor Features Each transistor elements are independent Applications For low frequency amplify application MARKING 5G Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 6 V Collector Current IC 200 mA Power Dissipation Ptot 150 mW Junction Temperature ... See More ⇒
Detailed specifications: MDT13N10D, MDT15N10, MDT15P04D, MDT18N10D, MDT18N20, MDT20N06, MDT20P04D, MDT2N60, IRFB4227, MDT30N10, MDT30N10D, MDT40N06D, MDT40N10D, MDT50N06D, MPF2N60, MPF3N150, MPF40N25
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