DMN3030LSS Todos los transistores

 

DMN3030LSS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMN3030LSS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 741 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: SO8
 

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DMN3030LSS Datasheet (PDF)

 ..1. Size:177K  diodes
dmn3030lss.pdf pdf_icon

DMN3030LSS

DMN3030LSSSINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SO-8 18m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 30m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020D

 6.1. Size:272K  diodes
dmn3030lfg.pdf pdf_icon

DMN3030LSS

DMN3030LFGGreenN-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) PackageTA = +25C Small form factor thermally efficient package enables higher 18m @ VGS = 10V POWERDI 8.6A density end products 30V 3333-8 27m @ VGS = 4.5V 5.5A Occupies just 33% of the boa

 8.1. Size:153K  diodes
dmn3033lsd.pdf pdf_icon

DMN3030LSS

DMN3033LSDDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Dual N-Channel MOSFET Case: SOP-8L Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 22m @ VGS = 10V Moisture Sensitivity: Level 1

 8.2. Size:321K  diodes
dmn3032le.pdf pdf_icon

DMN3030LSS

DMN3032LE30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-ResistanceV(BR)DSS RDS(on) max TA = +25C Low Input Capacitance 29m @ VGS = 10V 5.6A Fast Switching Speed 30V 35m @ VGS = 4.5V 4.8A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gre

Otros transistores... DMN2600UFB , DMN3005LK3 , DMN3007LSS , DMN3010LSS , DMN3020LK3 , DMN3024LK3 , DMN3024LSD , DMN3024LSS , IRFP450 , DMN3031LSS , DMN3033LDM , DMN3033LSD , DMN3033LSN , DMN3051L , DMN3051LDM , DMN3052L , DMN3052LSS .

History: SI4462DY | H4946S | 2SK1905 | IRF4104PBF | IXFH28N60P3 | IRF6633 | APQ12SN60AF

 

 
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