Справочник MOSFET. DMN3030LSS

 

DMN3030LSS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DMN3030LSS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Qgⓘ - Общий заряд затвора: 16.7 nC
   Cossⓘ - Выходная емкость: 741 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm
   Тип корпуса: SO8

 Аналог (замена) для DMN3030LSS

 

 

DMN3030LSS Datasheet (PDF)

 ..1. Size:177K  diodes
dmn3030lss.pdf

DMN3030LSS
DMN3030LSS

DMN3030LSSSINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SO-8 18m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 30m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020D

 6.1. Size:272K  diodes
dmn3030lfg.pdf

DMN3030LSS
DMN3030LSS

DMN3030LFGGreenN-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) PackageTA = +25C Small form factor thermally efficient package enables higher 18m @ VGS = 10V POWERDI 8.6A density end products 30V 3333-8 27m @ VGS = 4.5V 5.5A Occupies just 33% of the boa

 8.1. Size:153K  diodes
dmn3033lsd.pdf

DMN3030LSS
DMN3030LSS

DMN3033LSDDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Dual N-Channel MOSFET Case: SOP-8L Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 22m @ VGS = 10V Moisture Sensitivity: Level 1

 8.2. Size:321K  diodes
dmn3032le.pdf

DMN3030LSS
DMN3030LSS

DMN3032LE30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-ResistanceV(BR)DSS RDS(on) max TA = +25C Low Input Capacitance 29m @ VGS = 10V 5.6A Fast Switching Speed 30V 35m @ VGS = 4.5V 4.8A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gre

 8.3. Size:545K  diodes
dmn3035lwn.pdf

DMN3030LSS
DMN3030LSS

DMN3035LWN 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX V(BR)DSS RDS(ON) MAX TA = +25C Low Input Capacitance 35m @ VGS = 10V 5.5A Fast Switching Speed 30V 45m @ VGS = 4.5V 4.9A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descriptio

 8.4. Size:179K  diodes
dmn3031lss.pdf

DMN3030LSS
DMN3030LSS

DMN3031LSSSINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SO-8 18.5m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 31m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020D

 8.5. Size:397K  diodes
dmn3033lsnq.pdf

DMN3030LSS
DMN3030LSS

DMN3033LSNQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Gate Charge ID BVDSS RDS(on) max Low RDS(ON) TA = +25C Low Input/Output Leakage 6A 30m @ VGS = 10V 30V 40m @ VGS = 4.5V 4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standa

 8.6. Size:147K  diodes
dmn3033ldm.pdf

DMN3030LSS
DMN3030LSS

DMN3033LDMN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low Gate Charge Case: SOT-26 Low RDS(ON): Case Material - Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 33 m @VGS = 10V Moisture Sensitivity: Level 1 per J-STD-020D 40 m @VGS

 8.7. Size:130K  diodes
dmn3033lsn.pdf

DMN3030LSS
DMN3030LSS

DMN3033LSNN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low Gate Charge Case: SC-59 Low RDS(ON): Case Material - Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 30 m @VGS = 10V Moisture Sensitivity: Level 1 per J-STD-020 40 m @VGS =

 8.8. Size:573K  diodes
dmn3032lfdb.pdf

DMN3030LSS
DMN3030LSS

DMN3032LFDB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max BVDSS RDS(ON) Max Low Input Capacitance TA = +25C Fast Switching Speed 6.2A 30m @ VGS = 10V Low Input/Output Leakage 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 42m @ VGS = 4.5V 5.2A Halogen and Antimony Free

 8.9. Size:75K  tysemi
dmn3033lsn.pdf

DMN3030LSS
DMN3030LSS

Product specificationDMN3033LSNN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low Gate Charge Case: SC-59 Low RDS(ON): Case Material - Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 30 m @VGS = 10V Moisture Sensitivity: Level 1 per J-STD-020 40 m @VGS = 4.5V Terminals: Finish Matte

 8.10. Size:836K  cn vbsemi
dmn3033lsn.pdf

DMN3030LSS
DMN3030LSS

DMN3033LSNwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

Другие MOSFET... DMN2600UFB , DMN3005LK3 , DMN3007LSS , DMN3010LSS , DMN3020LK3 , DMN3024LK3 , DMN3024LSD , DMN3024LSS , 4N60 , DMN3031LSS , DMN3033LDM , DMN3033LSD , DMN3033LSN , DMN3051L , DMN3051LDM , DMN3052L , DMN3052LSS .

 

 
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