MPG100N07S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MPG100N07S  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 70 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 95 nS

Cossⓘ - Capacitancia de salida: 440 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm

Encapsulados: TO263

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MPG100N07S datasheet

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 mpg100n07s mpg100n07p.pdf pdf_icon

MPG100N07S

DESCRIPTION The MPG100N07P uses advanced trench technology to provide excellent R , low gate DS(ON) charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Schematic diagram V = 70V,I = 100A DS D R

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 mpg100n06 mdt100n06 mps100n06.pdf pdf_icon

MPG100N07S

Green Product MPG100N06 60VN-Channel Power MOSFET DESCRIPTION KEYCHARACTERISTICS V =60V,I =100A DS D The MPG100N06 uses advanced trench technology to provide R

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MPG100N07S

Silicon N-Channel Power MOSFET Description The MPG100N06 uses advanced trench technology to provide excellent R , low gate charge. It can be DS(ON) used in a wide variety of applications. KEY CHARACTERISTICS V =60V,I =100A R

 6.3. Size:809K  cn minos
 mpg100n08p.pdf pdf_icon

MPG100N07S

80V N-Channel Power MOSFET DESCRIPTION The MPG100N08 uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) in a wide variety of applications. Feature Description V = 80V,I = 100A. DS D R = 5.8m (typ.) @ V = 10V. DS(ON) GS R = 8.6m (Max.) @ V = 10V. DS(ON) GS Schematic diagram Uses CRM(CQ) advanced Trench technology. Extreme

MOSTRAR MÁS

Otros transistores... MPF40N25, MPF50N25, MPF5N65, MPF8N65, MPF9N20, MPG100N06P, MPG100N06S, MPG100N07P, IRF9540N, MPG100N08P, MDT5N65, MDT60N06D, MDT60N10D, MDT60NF06D, MDT70N03, MDT7N65, MDT9N20