MPG100N07S - Даташиты. Аналоги. Основные параметры

DESCRIPTIONThe MPG100N07P uses advanced trenchtechnology to provide excellent R , low gateDS(ON)charge. It can be used in a wide variety ofapplications.KEY CHARACTERISTICSSchematic diagram V = 70V,I = 100ADS D R

Green ProductMPG100N0660VN-Channel Power MOSFETDESCRIPTION KEYCHARACTERISTICS V =60V,I =100ADS DThe MPG100N06 uses advanced trench technology to provide R

Silicon N-Channel Power MOSFETDescriptionThe MPG100N06 uses advanced trench technologyto provide excellent R , low gate charge. It can beDS(ON)used in a wide variety of applications.KEY CHARACTERISTICS V =60V,I =100A R

80V N-Channel Power MOSFETDESCRIPTIONThe MPG100N08 uses advanced trench technology toprovide excellent R , low gate charge. It can be usedDS(ON)in a wide variety of applications.Feature Description V = 80V,I = 100A.DS DR = 5.8m (typ.) @ V = 10V.DS(ON) GSR = 8.6m (Max.) @ V = 10V.DS(ON) GS Schematic diagram Uses CRM(CQ) advanced Trench technology. Extreme

Silicon N-Channel Power MOSFETDescriptionThe MPG100N03 uses advanced technology and design toprovide excellent R . It can be used in a wide variety ofDS(ON)applications.General FeaturesV =30V, I =100ADS DLow ON ResistanceLow Reverse transfer capacitancesSchematic diagram100% Single Pulse avalanche energy TestApplicationPower switching applicationA