MDT60N06D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MDT60N06D  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 87 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm

Encapsulados: TO252

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MDT60N06D datasheet

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MDT60N06D

60V N-Channel Power MOSFE Description The MDT60N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. General Features V =60V, R

 8.1. Size:1035K  cn minos
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MDT60N06D

60V N-Channel Power MOSFET DESCRIPTION The MPG60NF06 uses advanced trench technology to provide excellent R , low gate charge. It can be used in DS(ON) a wide variety of applications. KEY CHARACTERISTICS V = 60V,I = 60A DS D R

 8.2. Size:983K  cn minos
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MDT60N06D

100V N-Channel Power MOSFET DESCRIPTION The MDT60N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS V = 100V,I = 60A R

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MDT60N06D

DESCRIPTION The MPG60N10P uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. Application Power switching application Hard switched and High frequency circuits Uninterruptible power supply Schematic diagram KEY CHARACTERISTICS V = 100V,I = 60A DS D R

Otros transistores... MPF8N65, MPF9N20, MPG100N06P, MPG100N06S, MPG100N07P, MPG100N07S, MPG100N08P, MDT5N65, AO3401, MDT60N10D, MDT60NF06D, MDT70N03, MDT7N65, MDT9N20, MLS60R380D, MLS65R380D, MLS65R580D