MDT60N06D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MDT60N06D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 87 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 60 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 100 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MDT60N06D MOSFET
MDT60N06D Datasheet (PDF)
mdt60n06d.pdf

60V N-Channel Power MOSFEDescriptionThe MDT60N06 uses advanced trench technologyto provide excellent RDS(ON), low gate charge. It canbe used in a wide variety of applications.General Features V =60V, R
mpg60nf06p mdt60nf06d.pdf

60V N-Channel Power MOSFETDESCRIPTIONThe MPG60NF06 uses advanced trench technology toprovide excellent R , low gate charge. It can be used inDS(ON)a wide variety of applications.KEY CHARACTERISTICS V = 60V,I = 60ADS DR
mdt60n10d.pdf

100V N-Channel Power MOSFETDESCRIPTIONThe MDT60N10D uses advanced trench technology toprovide excellent RDS(ON), low gate charge. It can be usedin a wide variety of applications.KEY CHARACTERISTICS V = 100V,I = 60A R
mpg60n10p mdt60n10d.pdf

DESCRIPTIONThe MPG60N10P uses advanced trench technology to provideexcellent RDS(ON), low gate charge. It can be used in a widevariety of applications.Application Power switching application Hard switched and High frequency circuits Uninterruptible power supplySchematic diagramKEY CHARACTERISTICS V = 100V,I = 60ADS DR
Otros transistores... MPF8N65 , MPF9N20 , MPG100N06P , MPG100N06S , MPG100N07P , MPG100N07S , MPG100N08P , MDT5N65 , IRFP260 , MDT60N10D , MDT60NF06D , MDT70N03 , MDT7N65 , MDT9N20 , MLS60R380D , MLS65R380D , MLS65R580D .



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