MDT60N06D Datasheet. Specs and Replacement

Type Designator: MDT60N06D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 87 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TO252

MDT60N06D substitution

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MDT60N06D datasheet

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MDT60N06D

60V N-Channel Power MOSFE Description The MDT60N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. General Features V =60V, R ... See More ⇒

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 mpg60nf06p mdt60nf06d.pdf pdf_icon

MDT60N06D

60V N-Channel Power MOSFET DESCRIPTION The MPG60NF06 uses advanced trench technology to provide excellent R , low gate charge. It can be used in DS(ON) a wide variety of applications. KEY CHARACTERISTICS V = 60V,I = 60A DS D R ... See More ⇒

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MDT60N06D

100V N-Channel Power MOSFET DESCRIPTION The MDT60N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS V = 100V,I = 60A R ... See More ⇒

 8.3. Size:659K  cn minos
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MDT60N06D

DESCRIPTION The MPG60N10P uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. Application Power switching application Hard switched and High frequency circuits Uninterruptible power supply Schematic diagram KEY CHARACTERISTICS V = 100V,I = 60A DS D R ... See More ⇒

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Detailed specifications: MPF8N65, MPF9N20, MPG100N06P, MPG100N06S, MPG100N07P, MPG100N07S, MPG100N08P, MDT5N65, AO3401, MDT60N10D, MDT60NF06D, MDT70N03, MDT7N65, MDT9N20, MLS60R380D, MLS65R380D, MLS65R580D

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