MPF12N65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

N-Channel Enhancement Mode Power MOSFET Description The MPF12N65 uses advanced trench technology and design to provide excellent RDS(ON)with low gate charge. It can be used in a wide variety of applications. General Features V =12A I =650V DS D R =0.58 @V =10V,I =6.0A DS(on)(typ) GS D Schematic diagram Low Crss 18.5pF@25V Fast switching Improved dv/dt capabil

JMPF12N65BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 650V, 12A Load Switch RDS(ON)

TMP12N60A(G)/TMPF12N60A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 12A

TMP12N60/TMPF12N60 TMP12N60G/TMPF12N60G VDSS = 660 V @Tjmax Features ID = 12A Low gate charge RDS(on) = 0.65 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP12N60 / TMPF12N60 TO-220 / TO-220F TMP12N60 / TMPF12N60 RoHS TMP12N60G / TMPF12N60G

JMPF12N60BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 600V, 12A Load Switch RDS(ON)