MPF12N65 Datasheet. Specs and Replacement
Type Designator: MPF12N65 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 175 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.68 Ohm
Package: TO220F
MPF12N65 substitution
- MOSFET ⓘ Cross-Reference Search
MPF12N65 datasheet
mpf12n65.pdf
N-Channel Enhancement Mode Power MOSFET Description The MPF12N65 uses advanced trench technology and design to provide excellent RDS(ON)with low gate charge. It can be used in a wide variety of applications. General Features V =12A I =650V DS D R =0.58 @V =10V,I =6.0A DS(on)(typ) GS D Schematic diagram Low Crss 18.5pF@25V Fast switching Improved dv/dt capabil... See More ⇒
jmpf12n65bj.pdf
JMPF12N65BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 650V, 12A Load Switch RDS(ON) ... See More ⇒
tmp12n60a tmpf12n60a.pdf
TMP12N60A(G)/TMPF12N60A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 12A ... See More ⇒
tmp12n60 tmpf12n60.pdf
TMP12N60/TMPF12N60 TMP12N60G/TMPF12N60G VDSS = 660 V @Tjmax Features ID = 12A Low gate charge RDS(on) = 0.65 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP12N60 / TMPF12N60 TO-220 / TO-220F TMP12N60 / TMPF12N60 RoHS TMP12N60G / TMPF12N60G... See More ⇒
Detailed specifications: MP18N20, MP20N40P, MP3205B, MP40N20, MP50N06, MP5N65, MP70N10, MP9N20, TK10A60D, MPF13N50, MPF18N20, MPF20N50, AP15N04S, AP3416AI, AP4N06SI, AP50N03S, AP50N06Y
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