MPF12N65 Datasheet and Replacement
Type Designator: MPF12N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 175 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.68 Ohm
Package: TO220F
MPF12N65 substitution
MPF12N65 Datasheet (PDF)
mpf12n65.pdf

N-Channel Enhancement Mode Power MOSFETDescriptionThe MPF12N65 uses advanced trench technologyand design to provide excellent RDS(ON)with low gatecharge. It can be used in a wide variety of applications.General Features V =12AI =650VDS D R =0.58@V =10V,I =6.0ADS(on)(typ) GS DSchematic diagram Low Crss:18.5pF@25V Fast switching Improved dv/dt capabil
jmpf12n65bj.pdf

JMPF12N65BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 650V, 12A Load SwitchRDS(ON)
tmp12n60a tmpf12n60a.pdf

TMP12N60A(G)/TMPF12N60A(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 12A
tmp12n60 tmpf12n60.pdf

TMP12N60/TMPF12N60TMP12N60G/TMPF12N60GVDSS = 660 V @TjmaxFeaturesID = 12A Low gate chargeRDS(on) = 0.65 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC QualificationDGSDevice Package Marking RemarkTMP12N60 / TMPF12N60 TO-220 / TO-220F TMP12N60 / TMPF12N60 RoHSTMP12N60G / TMPF12N60G
Datasheet: MP18N20 , MP20N40P , MP3205B , MP40N20 , MP50N06 , MP5N65 , MP70N10 , MP9N20 , 13N50 , MPF13N50 , MPF18N20 , MPF20N50 , AP15N04S , AP3416AI , AP4N06SI , AP50N03S , AP50N06Y .
Keywords - MPF12N65 MOSFET datasheet
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