AP50N06Y Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP50N06Y  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 50 nS

Cossⓘ - Capacitancia de salida: 145 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: TO251

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AP50N06Y datasheet

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 ap50n06y.pdf pdf_icon

AP50N06Y

AP50N06Y 60V N-Channel Enhancement Mode MOSFET Description The AP50N06Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =60V I =50A DS D R

 7.1. Size:2029K  allpower
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AP50N06Y

 7.2. Size:2440K  cn apm
 ap50n06nf.pdf pdf_icon

AP50N06Y

AP50N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP50N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R

 7.3. Size:824K  cn apm
 ap50n06p ap50n06t.pdf pdf_icon

AP50N06Y

AP50N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP50N06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R

MOSTRAR MÁS

Otros transistores... MPF12N65, MPF13N50, MPF18N20, MPF20N50, AP15N04S, AP3416AI, AP4N06SI, AP50N03S, 5N60, AP60N02BD, AP130N20MP, AP3404MI, AP50N06DF, AP6G04S, AP70N03DF, AP80N08D, AP80N08NF