AP60N02BD Todos los transistores

 

AP60N02BD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP60N02BD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 37 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 V
   Qgⓘ - Carga de la puerta: 23 nC
   trⓘ - Tiempo de subida: 37 nS
   Cossⓘ - Capacitancia de salida: 289 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
   Paquete / Cubierta: TO252
 

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AP60N02BD Datasheet (PDF)

 ..1. Size:1402K  cn apm
 ap60n02bd.pdf pdf_icon

AP60N02BD

AP60N02BD 20V N-Channel Enhancement Mode MOSFET Description The AP60N02BD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS DR

 7.1. Size:1352K  cn apm
 ap60n02df.pdf pdf_icon

AP60N02BD

AP60N02DF 20V N-Channel Enhancement Mode MOSFET Description The AP60N02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS DR

 7.2. Size:1158K  cn apm
 ap60n02d.pdf pdf_icon

AP60N02BD

AP60N02D 20V N-Channel Enhancement Mode MOSFET Description The AP60N02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS DR

 7.3. Size:1354K  cn apm
 ap60n02nf.pdf pdf_icon

AP60N02BD

AP60N02NF 20V N-Channel Enhancement Mode MOSFET Description The AP60N02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS DR

MOSTRAR MÁS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF9540 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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