AP60N02BD Datasheet and Replacement. Cross Reference Search

AP60N02BD Datasheet (PDF)

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AP60N02BD 20V N-Channel Enhancement Mode MOSFET Description The AP60N02BD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS DR

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AP60N03GS/PPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow On-Resistance D BVDSS 30V Fast Switching RDS(ON) 13.5m Simple Drive Requirement ID 55A GSDescriptionThe Advanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,

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AP60N03GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Fast Switching Characteristic RDS(ON) 13.5m Simple Drive Requirement ID 55AG RoHS Compliant & Halogen-FreeSDescriptionAP60N03 series are from Advanced Power innovated design andGsilicon process technology to achieve the l

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AP60N03GH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Fast Switching RDS(ON) 13.5m Simple Drive Requirement ID 55AG RoHS CompliantSDescriptionGThe Advanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized d

Datasheet: MPF13N50 , MPF18N20 , MPF20N50 , AP15N04S , AP3416AI , AP4N06SI , AP50N03S , AP50N06Y , IRF2807 , AP130N20MP , AP3404MI , AP50N06DF , AP6G04S , AP70N03DF , AP80N08D , AP80N08NF , AP80P01NF .