AP60N02BD Datasheet. Specs and Replacement

Type Designator: AP60N02BD  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37 nS

Cossⓘ - Output Capacitance: 289 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO252

AP60N02BD substitution

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AP60N02BD datasheet

 ..1. Size:1402K  cn apm
 ap60n02bd.pdf pdf_icon

AP60N02BD

AP60N02BD 20V N-Channel Enhancement Mode MOSFET Description The AP60N02BD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R ... See More ⇒

 7.1. Size:1352K  cn apm
 ap60n02df.pdf pdf_icon

AP60N02BD

AP60N02DF 20V N-Channel Enhancement Mode MOSFET Description The AP60N02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R ... See More ⇒

 7.2. Size:1158K  cn apm
 ap60n02d.pdf pdf_icon

AP60N02BD

AP60N02D 20V N-Channel Enhancement Mode MOSFET Description The AP60N02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R ... See More ⇒

 7.3. Size:1354K  cn apm
 ap60n02nf.pdf pdf_icon

AP60N02BD

AP60N02NF 20V N-Channel Enhancement Mode MOSFET Description The AP60N02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R ... See More ⇒

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Detailed specifications: MPF13N50, MPF18N20, MPF20N50, AP15N04S, AP3416AI, AP4N06SI, AP50N03S, AP50N06Y, RFP50N06, AP130N20MP, AP3404MI, AP50N06DF, AP6G04S, AP70N03DF, AP80N08D, AP80N08NF, AP80P01NF

Keywords - AP60N02BD MOSFET specs

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