All MOSFET. AP60N02BD Datasheet

 

AP60N02BD Datasheet and Replacement


   Type Designator: AP60N02BD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 289 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO252

 AP60N02BD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP60N02BD Datasheet (PDF)

 ..1. Size:1402K  cn apm
ap60n02bd.pdf pdf_icon

AP60N02BD

AP60N02BD 20V N-Channel Enhancement Mode MOSFET Description The AP60N02BD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R ... See More ⇒

 7.1. Size:1352K  cn apm
ap60n02df.pdf pdf_icon

AP60N02BD

AP60N02DF 20V N-Channel Enhancement Mode MOSFET Description The AP60N02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R ... See More ⇒

 7.2. Size:1158K  cn apm
ap60n02d.pdf pdf_icon

AP60N02BD

AP60N02D 20V N-Channel Enhancement Mode MOSFET Description The AP60N02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R ... See More ⇒

 7.3. Size:1354K  cn apm
ap60n02nf.pdf pdf_icon

AP60N02BD

AP60N02NF 20V N-Channel Enhancement Mode MOSFET Description The AP60N02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R ... See More ⇒

Datasheet: MPF13N50 , MPF18N20 , MPF20N50 , AP15N04S , AP3416AI , AP4N06SI , AP50N03S , AP50N06Y , RFP50N06 , AP130N20MP , AP3404MI , AP50N06DF , AP6G04S , AP70N03DF , AP80N08D , AP80N08NF , AP80P01NF .

History: 2SJ245S

Keywords - AP60N02BD MOSFET datasheet

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