AP3404MI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP3404MI
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 47 nS
Cossⓘ - Capacitancia de salida: 84 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET AP3404MI
AP3404MI Datasheet (PDF)
ap3404mi.pdf
AP3404MI 30V N-Channel Enhancement Mode MOSFET Description The AP3404MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =6A DS D R
ap3404bi.pdf
AP3404BI 30V N-Channel Enhancement Mode MOSFET Description The AP3404BI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =4.2A DS D R
Otros transistores... MPF20N50 , AP15N04S , AP3416AI , AP4N06SI , AP50N03S , AP50N06Y , AP60N02BD , AP130N20MP , AO3407 , AP50N06DF , AP6G04S , AP70N03DF , AP80N08D , AP80N08NF , AP80P01NF , AP8P10S , AP90N06D .
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