AP3404MI Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP3404MI  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 47 nS

Cossⓘ - Capacitancia de salida: 84 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: SOT23

  📄📄 Copiar 

 Búsqueda de reemplazo de AP3404MI MOSFET

- Selecciónⓘ de transistores por parámetros

 

AP3404MI datasheet

 ..1. Size:2396K  cn apm
 ap3404mi.pdf pdf_icon

AP3404MI

AP3404MI 30V N-Channel Enhancement Mode MOSFET Description The AP3404MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =6A DS D R

 8.1. Size:1931K  allpower
 ap3404s.pdf pdf_icon

AP3404MI

S S S S S

 8.2. Size:1523K  allpower
 ap3404.pdf pdf_icon

AP3404MI

 8.3. Size:2067K  cn apm
 ap3404bi.pdf pdf_icon

AP3404MI

AP3404BI 30V N-Channel Enhancement Mode MOSFET Description The AP3404BI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =4.2A DS D R

MOSTRAR MÁS

Otros transistores... MPF20N50, AP15N04S, AP3416AI, AP4N06SI, AP50N03S, AP50N06Y, AP60N02BD, AP130N20MP, AO3407, AP50N06DF, AP6G04S, AP70N03DF, AP80N08D, AP80N08NF, AP80P01NF, AP8P10S, AP90N06D