AP50N06DF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP50N06DF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 41 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 41.2 nS

Cossⓘ - Capacitancia de salida: 201 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm

Encapsulados: PDFN3X3-8L

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AP50N06DF datasheet

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AP50N06DF

AP50N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP50N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R

 6.1. Size:2272K  cn apm
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AP50N06DF

AP50N06D 60V N-Channel Enhancement Mode MOSFET Description The AP50N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R

 7.1. Size:2029K  allpower
 ap50n06k.pdf pdf_icon

AP50N06DF

 7.2. Size:2440K  cn apm
 ap50n06nf.pdf pdf_icon

AP50N06DF

AP50N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP50N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R

MOSTRAR MÁS

Otros transistores... AP15N04S, AP3416AI, AP4N06SI, AP50N03S, AP50N06Y, AP60N02BD, AP130N20MP, AP3404MI, 18N50, AP6G04S, AP70N03DF, AP80N08D, AP80N08NF, AP80P01NF, AP8P10S, AP90N06D, APG12N10D