AP50N06DF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP50N06DF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 41 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 41.2 nS
Cossⓘ - Capacitancia de salida: 201 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
Paquete / Cubierta: PDFN3X3-8L
Búsqueda de reemplazo de MOSFET AP50N06DF
Principales características: AP50N06DF
ap50n06df.pdf
AP50N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP50N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R
ap50n06d.pdf
AP50N06D 60V N-Channel Enhancement Mode MOSFET Description The AP50N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R
ap50n06nf.pdf
AP50N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP50N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R
Otros transistores... AP15N04S , AP3416AI , AP4N06SI , AP50N03S , AP50N06Y , AP60N02BD , AP130N20MP , AP3404MI , 18N50 , AP6G04S , AP70N03DF , AP80N08D , AP80N08NF , AP80P01NF , AP8P10S , AP90N06D , APG12N10D .
Liste
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