AP50N06DF Datasheet. Specs and Replacement
Type Designator: AP50N06DF 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 41.2 nS
Cossⓘ - Output Capacitance: 201 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: PDFN3X3-8L
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AP50N06DF datasheet
ap50n06df.pdf
AP50N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP50N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R ... See More ⇒
ap50n06d.pdf
AP50N06D 60V N-Channel Enhancement Mode MOSFET Description The AP50N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R ... See More ⇒
ap50n06nf.pdf
AP50N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP50N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R ... See More ⇒
Detailed specifications: AP15N04S, AP3416AI, AP4N06SI, AP50N03S, AP50N06Y, AP60N02BD, AP130N20MP, AP3404MI, 18N50, AP6G04S, AP70N03DF, AP80N08D, AP80N08NF, AP80P01NF, AP8P10S, AP90N06D, APG12N10D
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