AP80P01NF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP80P01NF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 41.67 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20.6 nS

Cossⓘ - Capacitancia de salida: 769 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm

Encapsulados: PDFN5X6-8L

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AP80P01NF datasheet

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AP80P01NF

AP80P01NF -12V P-Channel Enhancement Mode MOSFET Description The AP80P01NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -12V I =-80A DS D R

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 ap80p04k.pdf pdf_icon

AP80P01NF

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 ap80p06d.pdf pdf_icon

AP80P01NF

AP80P06D -60V P-Channel Enhancement Mode MOSFET Description The AP80P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-80A DS D R

 8.3. Size:1788K  cn apm
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AP80P01NF

AP80P04D -40V P-Channel Enhancement Mode MOSFET Description The AP80P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-80 A DS D R

MOSTRAR MÁS

Otros transistores... AP60N02BD, AP130N20MP, AP3404MI, AP50N06DF, AP6G04S, AP70N03DF, AP80N08D, AP80N08NF, IRFZ24N, AP8P10S, AP90N06D, APG12N10D, AP10G04DF, AP10H03DF, AP10H03S, AP15P04S, AP3400MI