AP80P01NF MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

..1. Size:3546K cn apm
ap80p01nf.pdf pdf_icon

AP80P01NF -12V P-Channel Enhancement Mode MOSFET Description The AP80P01NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -12V I =-80A DS D R

8.1. Size:508K allpower
ap80p04k.pdf pdf_icon

8.2. Size:1641K cn apm
ap80p06d.pdf pdf_icon

AP80P06D -60V P-Channel Enhancement Mode MOSFET Description The AP80P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-80A DS D R

8.3. Size:1788K cn apm
ap80p04d.pdf pdf_icon

AP80P04D -40V P-Channel Enhancement Mode MOSFET Description The AP80P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-80 A DS D R

8.4. Size:1789K cn apm
ap80p06nf.pdf pdf_icon

AP80P06NF -60V P-Channel Enhancement Mode MOSFET Description The AP80P06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-80A DS D R

8.5. Size:1735K cn apm
ap80p04nf.pdf pdf_icon

AP80P04NF -40V P-Channel Enhancement Mode MOSFET Description The AP80P04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-80 A DS D R

8.6. Size:1715K cn apm
ap80p06p ap80p06t.pdf pdf_icon

AP80P06PIT -60V P-Channel Enhancement Mode MOSFET Description The AP80P06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-82A DS D R

Principales características: AP80P01NF

Liste

Recientemente añadidas las descripciónes de los transistores:

Popular searches

AllTransistors(C)

AP80P01NF Todos los transistores